component
BCP56-10
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| bcp56-10-etched.glb | 17d ago |
| bcp56-10-etched.step | 17d ago |
| bcp56-10-hero.glb | 17d ago |
| bcp56-10-hero.overlay.json | 17d ago |
| bcp56-10.glb | 17d ago |
| bcp56-10.kicad_mod | 17d ago |
| bcp56-10.kicad_sym | 17d ago |
| bcp56-10.lbr | 17d ago |
| bcp56-10.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
BCP56-10
Changjing · Bipolar (BJT) · SOT-223
BCP56-10 from Changjing, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN transistor; the emitter-base voltage rating VEBO is 5 V for the BCP54/55/56 family. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor; for BCP56 the collector-base voltage VCBO is 100 V, collector-emitter voltage VCEO is 80 V, and continuous collector current IC is 1 A. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor, the reference for the base and collector ratings listed in the maximum ratings table. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage (BCP56) | V(BR)CBO | 100 | V | IC=0.1mA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage (BCP56) | V(BR)CEO | 80 | V | IC=10mA, IB=0 | 1 | ||
| Base-emitter breakdown voltage | V(BR)EBO | 5 | V | IE=10μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB=30 V, IE=0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 25 | VCE=2V, IC=5mA | 1 | |||
| DC current gain hFE(2) (rank -10 range) | hFE(2) | 63 | 160 | VCE=2V, IC=150mA | 1 | ||
| DC current gain hFE(3) | hFE(3) | 25 | VCE=2V, IC=500mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=500mA, IB=50mA | 1 | ||
| Base-emitter voltage | VBE | 1 | V | VCE=2V, IC=500mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE=10V, IC=50mA, f=100MHz | 1 | ||
| Collector-base voltage (BCP56) | VCBO | 100 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage (BCP56) | VCEO | 80 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage | VEBO | 5 | V | Ta=25℃ | 1 | ||
| Collector current, continuous | IC | 1 | A | 1 | |||
| Collector power dissipation | PC | 1.5 | W | Ta=25℃ | 1 | ||
| Storage temperature range | Tstg | -65 | 150 | ℃ | 1 | ||
| Thermal resistance junction to ambient | RθJA | 83.3 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
BCP56-10 - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
bcp56-10-etched.step/bcp56-10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcp56-10.step/bcp56-10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
4f8918c4f4f89dcd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).