component
BCP55-MS
Public Made by Adomby adom
MSKSEMI Bipolar Transistors - BJT, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13h ago |
| viewers | 13h ago |
| bcp55-ms-etched.glb | 13h ago |
| bcp55-ms-etched.step | 13h ago |
| bcp55-ms-hero.glb | 13h ago |
| bcp55-ms-hero.overlay.json | 13h ago |
| bcp55-ms.glb | 13h ago |
| bcp55-ms.kicad_mod | 13h ago |
| bcp55-ms.kicad_sym | 13h ago |
| bcp55-ms.lbr | 13h ago |
| bcp55-ms.step | 13h ago |
| package.json | 13h ago |
| page.json | 13h ago |
| README.md | 13h ago |
| verification.json | 13h ago |
BCP55-MS
MSKSEMI · Bipolar Transistors - BJT · SOT-223
BCP55-MS from MSKSEMI, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor, with emitter-base voltage VEBO rated at 5 V. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor, rated up to 1 A continuous collector current and 45 to 100 V collector-base voltage depending on variant. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor, referenced to the 5 V emitter-base rating (VEBO). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-223 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage (BCP55-MS) | V(BR)CBO | 60 | V | IC= 0.1mA,IE=0 | 2 | ||
| Collector-emitter breakdown voltage (BCP55-MS) | V(BR)CEO | 60 | V | IC= 10mA,IB=0 | 2 | ||
| Base-emitter breakdown voltage | V(BR)EBO | 5 | V | IE= 10μA,IC=0 | 2 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB= 30 V, IE=0 | 2 | ||
| DC current gain | hFE(1) | 25 | VCE= 2V, IC=5mA | 2 | |||
| DC current gain | hFE(2) | 63 | 250 | VCE= 2V, IC=150mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=500mA,IB=50mA | 2 | ||
| Base-emitter voltage | VBE | 1 | V | VCE=2V, IC=500mA | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE=10V,IC=50mA,f=100MHz | 2 | ||
| Collector-base voltage (BCP55-MS) | VCBO | 60 | V | Ta=25℃ | 2 | ||
| Collector-emitter voltage (BCP55-MS) | VCEO | 60 | V | Ta=25℃ | 2 | ||
| Emitter-base voltage | VEBO | 5 | V | Ta=25℃ | 2 | ||
| Collector current, continuous | IC | 1 | A | Ta=25℃ | 2 | ||
| Collector power dissipation | PC | 1.5 | W | Ta=25℃ | 2 | ||
| Storage temperature range | Tstg | -65 | 150 | ℃ | 2 | ||
| Thermal resistance, junction to ambient | RθJA | 83.3 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
BCP55-MS - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
bcp55-ms-etched.step/bcp55-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcp55-ms.step/bcp55-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (5 pp, sha256
c085b41541a26003, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).