component

BCM857BS-7-F

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbcm857bs-7-ffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 3h ago
viewers bcm857bs-7-f: viewers · Ray 3h ago
bcm857bs-7-f-etched.glb Publish 0.1.0 · Ray 3h ago
bcm857bs-7-f-etched.step bcm857bs-7-f: factory component page (tier=lcsc) · Ray 3h ago
bcm857bs-7-f-hero.glb bcm857bs-7-f: hero GLB from the etched model (keeps the MPN mark) · Ray 3h ago
bcm857bs-7-f-hero.overlay.json Publish 0.1.0 · Ray 3h ago
bcm857bs-7-f.glb Publish 0.1.0 · Ray 3h ago
bcm857bs-7-f.kicad_mod Publish 0.1.0 · Ray 3h ago
bcm857bs-7-f.kicad_sym Publish 0.1.0 · Ray 3h ago
bcm857bs-7-f.lbr Publish 0.1.0 · Ray 3h ago
bcm857bs-7-f.step Publish 0.1.0 · Ray 3h ago
package.json Publish 0.1.0 · Ray 3h ago
page.json Set visibility: public · Ray 3h ago
README.md Publish 0.1.0 · Ray 3h ago

BCM857BS-7-F

Diodes Incorporated · Bipolar (BJT) · SOT-363

BCM857BS-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of PNP transistor 1; transistors are fully internally isolated, with VEBO rated at -5V.
2 B1 passive Base of PNP transistor 1; peak base current IBM is -200mA.
3 C2 passive Collector of PNP transistor 2; VCEO -45V, IC -100mA continuous and ICM -200mA peak.
4 E2 passive Emitter of PNP transistor 2; VEBO rated at -5V.
5 B2 passive Base of PNP transistor 2; peak base current IBM is -200mA.
6 C1 passive Collector of PNP transistor 1; VCEO -45V, IC -100mA continuous and ICM -200mA peak.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage BVCEO -45 V IC = -10mA 2
Collector-Base Breakdown Voltage BVCBO -50 V IC = -100µA 2
Emitter-Base Breakdown Voltage BVEBO -5 V IE = -100µA 2
DC Current Gain hFE 220 475 VCE = -5V, IC = -2mA 2
DC Current Gain matching hFE1 / hFE2 0.9 1 VCE = -5V, IC = -2mA 2
Collector-Emitter Saturation Voltage VCE(sat) -100 mV IC = -10mA, IB = -0.5mA 2
Collector-Emitter Saturation Voltage VCE(sat) -400 mV IC = -100mA, IB = -5mA 2
Base-Emitter Voltage VBE(on) -580 -665 -750 mV VCE = -5V, IC = -2mA 2
Base-Emitter Voltage matching VBE1(on) - VBE2(on) 2 mV VCE = -5V, IC = -2mA 2
Collector-Cutoff Current ICBO -15 nA VCB = -30V 2
Collector-Cutoff Current ICBO -4 µA VCB = -30V, TA = +150°C 2
Emitter Cutoff Current IEBO -100 nA VEB = -5V 2
Gain Bandwidth Product fT 100 MHz VCE = -5V, IC = -10mA, f = 100MHz 2
Collector-Base Capacitance CCBO 2 3 pF VCB = -10V, f = 1MHz 2
Collector Current IC -100 mA 2
Peak Collector Current ICM -200 mA 2
Peak Base Current IBM -200 mA 2
Collector-Base Voltage VCBO -50 V 2
Collector-Emitter Voltage VCEO -45 V 2
Emitter-Base Voltage VEBO -5 V 2
Power Dissipation PD 200 mW Total Device; Note 6 2
Operating and Storage Temperature Range TJ, TSTG -65 150 °C 2
Thermal Resistance, Junction to Ambient Air RJA 625 °C/W Note 6 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Finish. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: BCM857BS-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bcm857bs-7-f-etched.step / bcm857bs-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcm857bs-7-f.step / bcm857bs-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 0684a83587661ef9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF