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BCM65S06D3

Public Made by Adom

by adom

Bestirpower SiC Diodes, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCM65S06D3

Bestirpower · SiC Diodes · DPAK

BCM65S06D3 from Bestirpower, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 NC unconnected No connect lead, labelled NC on the package picture; the centre lead is omitted and the remaining leads are on 2.286 mm BSC pitch.
2 K passive Cathode, connected to the mounting tab (labelled K); the diode is rated 650 V VRRM and 6 A forward current at TC = 157℃.
3 A passive Anode lead of the SiC Schottky diode, with forward voltage 1.4 V typ. and 1.7 V max. at IF = 6 A, TJ = 25℃.

Key specifications

Parameter Value
Manufacturer Bestirpower
Package DPAK
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC blocking voltage VDC 650 V TC = 25℃ 2
Forward Voltage VF 1.4 1.7 V IF=6A, TJ=25℃ 2
Reverse Current IR 2 20 μA VR = 650 V, TJ = 25℃ 2
Repetitive Peak Reverse Voltage VRRM 650 V TC = 25℃ 1
Forward Current IF 19 A TC = 25℃ 1
Forward Current IF 9 A TC = 135℃ 1
Forward Current IF 6 A TC = 157℃ 1
Non-Repetitive Forward Surge Current IF,SM 49 A TC = 25℃, tp = 10 ms 1
Non-Repetitive Forward Surge Current IF,SM 43 A TC = 110℃, tp = 10 ms 1
Repetitive Peak Forward Surge Current IF,RM 38 A TC = 25℃, tp = 10 ms 1
I2t value ∫I2t 13 A2s TC = 25℃, tp = 10 ms 1
I2t value ∫I2t 10 A2s TC = 110℃, tp = 10 ms 1
Power Dissipation Ptot 85 W TC = 25℃ 1
Power Dissipation Ptot 37 W TC = 110℃ 1
Power Dissipation Ptot 14 W TC = 150℃ 1
Operating Junction and Storage Temperature TJ,TSTG -55 175 ℃ 1
Forward Voltage VF 1.7 V IF=6A, TJ=175℃ 2
Reverse Current IR 40 μA VR = 650 V, TJ= 175℃ 2
Total Capacitive Charge QC 19 nC VR = 400 V, TJ = 25℃ 2
Total Capacitance C 386 pF VR = 0 V, f = 1MHz 2
Total Capacitance C 37 pF VR = 200 V, f = 1MHz 2
Total Capacitance C 29 pF VR = 400 V, f = 1MHz 2
Capacitance Stored Energy EC 5 μJ VR = 400 V, TC = 25℃ 2
Thermal Resistance, Junction to Case RθJC 1.77 ℃/W 2

CAD (KiCad official)

  • Symbol: BCM65S06D3
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: bcm65s06d3-etched.step / bcm65s06d3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcm65s06d3.step / bcm65s06d3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Bestirpower datasheet (5 pp, sha256 4c48751d8771a9ab, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF