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BCH65S04D3
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Bestirpower SiC Diodes, TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BCH65S04D3
Bestirpower · SiC Diodes · TO-220-2
BCH65S04D3 from Bestirpower, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the 650 V SiC Schottky diode, internally connected to the case/mounting tab. |
| 2 | A | passive | Anode of the 650 V, 4 A SiC Schottky diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | 1 | |||
| Forward Current | IF | 13 | A | TC = 25℃ | 1 | ||
| Forward Current | IF | 6 | A | TC = 135℃ | 1 | ||
| Forward Current | IF | 4 | A | TC = 154℃ | 1 | ||
| Non-Repetitive Forward Surge Current | IF,SM | 39 | A | TC = 25℃, tp = 10 ms | 1 | ||
| Non-Repetitive Forward Surge Current | IF,SM | 32 | A | TC = 110℃, tp = 10 ms | 1 | ||
| Repetitive Peak Forward Surge Current | IF,RM | 34 | A | TC = 25℃, tp = 10 ms | 1 | ||
| I2t value | ∫I2t | 7 | A2s | TC = 25℃, tp = 10 ms | 1 | ||
| I2t value | ∫I2t | 5 | A2s | TC = 110℃, tp = 10 ms | 1 | ||
| Power Dissipation | Ptot | 61 | W | TC = 25℃ | 1 | ||
| Power Dissipation | Ptot | 27 | W | TC = 110℃ | 1 | ||
| Power Dissipation | Ptot | 10 | W | TC = 150℃ | 1 | ||
| Operating Junction and Storage Temperature | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case, Typ. | RθJC | 2.44 | ℃/W | 2 | |||
| Forward Voltage | VF | 1.35 | 1.7 | V | IF=4A, TJ=25℃ | 2 | |
| Forward Voltage | VF | 1.7 | 1.9 | V | IF=4A, TJ=175℃ | 2 | |
| Reverse Current | IR | 1 | 20 | μA | VR = 650 V, TJ = 25℃ | 2 | |
| Reverse Current | IR | 12 | 100 | μA | VR = 650 V, TJ = 175℃ | 2 |
CAD (KiCad official)
- Symbol:
BCH65S04D3 - Footprint:
Package_TO_SOT_THT:TO-220-2_Vertical - 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files:
bch65s04d3-etched.step/bch65s04d3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bch65s04d3.step/bch65s04d3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bestirpower datasheet (6 pp, sha256
15246e8d10130bef, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BCH65S04D3
**Bestirpower** · SiC Diodes · TO-220-2
BCH65S04D3 from Bestirpower, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the 650 V SiC Schottky diode, internally connected to the case/mounting tab. |
| 2 | A | passive | Anode of the 650 V, 4 A SiC Schottky diode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | | | 650 | V | | 1 |
| Forward Current | IF | | | 13 | A | TC = 25℃ | 1 |
| Forward Current | IF | | | 6 | A | TC = 135℃ | 1 |
| Forward Current | IF | | | 4 | A | TC = 154℃ | 1 |
| Non-Repetitive Forward Surge Current | IF,SM | | | 39 | A | TC = 25℃, tp = 10 ms | 1 |
| Non-Repetitive Forward Surge Current | IF,SM | | | 32 | A | TC = 110℃, tp = 10 ms | 1 |
| Repetitive Peak Forward Surge Current | IF,RM | | | 34 | A | TC = 25℃, tp = 10 ms | 1 |
| I2t value | ∫I2t | | | 7 | A2s | TC = 25℃, tp = 10 ms | 1 |
| I2t value | ∫I2t | | | 5 | A2s | TC = 110℃, tp = 10 ms | 1 |
| Power Dissipation | Ptot | | | 61 | W | TC = 25℃ | 1 |
| Power Dissipation | Ptot | | | 27 | W | TC = 110℃ | 1 |
| Power Dissipation | Ptot | | | 10 | W | TC = 150℃ | 1 |
| Operating Junction and Storage Temperature | TJ,TSTG | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance, Junction to Case, Typ. | RθJC | | 2.44 | | ℃/W | | 2 |
| Forward Voltage | VF | | 1.35 | 1.7 | V | IF=4A, TJ=25℃ | 2 |
| Forward Voltage | VF | | 1.7 | 1.9 | V | IF=4A, TJ=175℃ | 2 |
| Reverse Current | IR | | 1 | 20 | μA | VR = 650 V, TJ = 25℃ | 2 |
| Reverse Current | IR | | 12 | 100 | μA | VR = 650 V, TJ = 175℃ | 2 |
## CAD (KiCad official)
- Symbol: `BCH65S04D3`
- Footprint: `Package_TO_SOT_THT:TO-220-2_Vertical`
- 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files: `bch65s04d3-etched.step` / `bch65s04d3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bch65s04d3.step` / `bch65s04d3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Bestirpower datasheet](docs/bch65s04d3-datasheet.pdf) (6 pp, sha256 `15246e8d10130bef`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bch65s04d3-datasheet.pdf)