component
BCH120S10D2
Public Made by Adomby adom
Bestirpower SiC Diodes, TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 5h ago |
| bch120s10d2-etched.glb | 12d ago |
| bch120s10d2-etched.step | 12d ago |
| bch120s10d2-hero.glb | 12d ago |
| bch120s10d2-hero.overlay.json | 12d ago |
| bch120s10d2.glb | 12d ago |
| bch120s10d2.kicad_mod | 12d ago |
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| bch120s10d2.lbr | 5h ago |
| bch120s10d2.step | 12d ago |
| package.json | 12d ago |
| page.json | 12d ago |
| README.md | 12d ago |
BCH120S10D2
Bestirpower · SiC Diodes · TO-220-2
BCH120S10D2 from Bestirpower, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the 1200 V, 10 A SiC Schottky diode, internally connected to the case/mounting tab. |
| 2 | A | passive | Anode of the 1200 V, 10 A SiC Schottky diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | 1 | |||
| Forward Current | IF | 35 | A | TC = 25℃ | 1 | ||
| Forward Current | IF | 17 | A | TC = 135℃ | 1 | ||
| Forward Current | IF | 10 | A | TC = 158℃ | 1 | ||
| Non-Repetitive Forward Surge Current | IF,SM | 59 | A | TC = 25℃, tp = 10 ms | 1 | ||
| Non-Repetitive Forward Surge Current | IF,SM | 45 | A | TC = 110℃, tp = 10 ms | 1 | ||
| Repetitive Peak Forward Surge Current | IF,RM | 50 | A | TC = 25℃, tp = 10 ms | 1 | ||
| I2dt value | ∫I2t | 17 | A2s | TC = 25℃, tp = 10 ms | 1 | ||
| I2dt value | ∫I2t | 10 | A2s | TC = 110℃, tp = 10 ms | 1 | ||
| Power Dissipation | Ptot | 191 | W | TC = 25℃ | 1 | ||
| Power Dissipation | Ptot | 83 | W | TC = 110℃ | 1 | ||
| Power Dissipation | Ptot | 32 | W | TC = 150℃ | 1 | ||
| Operating Junction and Storage Temperature | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| DC blocking voltage | VDC | 1200 | V | 2 | |||
| Forward Voltage | VF | 1.43 | 1.7 | V | IF=10A, Tc=25℃ | 2 | |
| Reverse Current | IR | 2 | 60 | μA | VR = 1200 V, TC = 25℃ | 2 | |
| Thermal Resistance, Junction to Case | RθJC | 0.787 | ℃/W | Typ. | 2 | ||
| Forward Voltage | VF | 1.2 | V | IF=5A | 2 | ||
| Forward Voltage | VF | 2 | V | IF=10A, Tc=175℃ | 2 | ||
| Reverse Current | IR | 4 | μA | VR = 1200 V, TC = 175℃ | 2 | ||
| Total Capacitive Charge | QC | 52 | nC | VR = 800 V, TC = 25℃ | 2 | ||
| Total Capacitance | C | 546 | pF | VR = 1 V, f = 1MHz | 2 | ||
| Total Capacitance | C | 47 | pF | VR = 400 V, f = 1MHz | 2 | ||
| Total Capacitance | C | 41 | pF | VR = 800 V, f = 1MHz | 2 | ||
| Capacitance Stored Energy | EC | 15.86 | μJ | VR = 800 V, TC = 25℃ | 2 |
CAD (KiCad official)
- Symbol:
BCH120S10D2 - Footprint:
Package_TO_SOT_THT:TO-220-2_Vertical - 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files:
bch120s10d2-etched.step/bch120s10d2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bch120s10d2.step/bch120s10d2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bestirpower datasheet (6 pp, sha256
612f57f81a981a0d, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).