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BC860CW

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC860CW

Nexperia · Bipolar (BJT) · SOT-323

BC860CW from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the PNP transistor; peak base current is limited to -200 mA (IBM) and emitter-base voltage to -5 V (VEBO).
2 E passive Emitter terminal of the PNP transistor; emitter-base voltage is limited to -5 V (VEBO) with open collector.
3 C passive Collector terminal of the PNP transistor; collector-emitter voltage is limited to -45 V (VCEO) and collector current to -100 mA (IC).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base cut-off current ICBO -15 nA VCB = -30 V; IE = 0 A; Tamb = 25 °C 3
collector-base cut-off current ICBO -4 µA VCB = -30 V; IE = 0 A; Tj = 150 °C 3
emitter-base cut-off current IEBO -100 nA VEB = -5 V; IC = 0 mA; Tamb = 25 °C 3
DC current gain hFE 420 800 VCE = -5 V; IC = -2 mA; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat -300 mV IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C 3
collector-emitter saturation voltage VCEsat -650 mV IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
base-emitter voltage VBE -600 -750 mV VCE = -5 V; IC = -2 mA; Tamb = 25 °C 3
base-emitter voltage VBE -820 mV VCE = -5 V; IC = -10 mA; Tamb = 25 °C 3
collector capacitance Cc 5 pF VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 3
transition frequency fT 100 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C 3
noise figure NF 4 dB VCE = -5 V; IC = -200 µA; RS = 2 kΩ; f = 10 Hz to 15.7 kHz; Tamb = 25 °C 3
collector-base voltage VCBO -50 V open emitter 2
collector-emitter voltage VCEO -45 V open base 2
emitter-base voltage VEBO -5 V open collector 2
collector current IC -100 mA 2
peak collector current ICM -200 mA 2
peak base current IBM -200 mA 2
total power dissipation Ptot 200 mW Tamb ≤ 25 °C; device mounted on FR4 PCB 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 625 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint 2

CAD (KiCad official)

  • Symbol: BC860CW
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc860cw-etched.step / bc860cw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc860cw.step / bc860cw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (7 pp, sha256 15ede789c754557b, retrieved 2026-10-19, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF