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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

BC860BW

Nexperia · Bipolar Transistors - BJT · SOT-323

BC860BW from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	B	input	Base of the PNP transistor; VEBO max -5 V (open collector).
2	E	passive	Emitter of the PNP transistor; VEBO max -5 V relative to base.
3	C	passive	Collector of the PNP transistor; VCEO max -45 V, IC max -100 mA.

Key specifications

Parameter	Value
Manufacturer	Nexperia
Package	SOT-323
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
collector-base cut-off current	ICBO			-15	nA	VCB = -30 V; IE = 0 A; Tamb = 25 °C	3
collector-base cut-off current	ICBO			-4	µA	VCB = -30 V; IE = 0 A; Tj = 150 °C	3
emitter-base cut-off current	IEBO			-100	nA	VEB = -5 V; IC = 0 mA; Tamb = 25 °C	3
DC current gain	hFE	220		475		VCE = -5 V; IC = -2 mA; Tamb = 25 °C	3
collector-emitter saturation voltage	VCEsat			-300	mV	IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C	3
collector-emitter saturation voltage	VCEsat			-650	mV	IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C	3
base-emitter voltage	VBE	-600		-750	mV	VCE = -5 V; IC = -2 mA; Tamb = 25 °C	3
base-emitter voltage	VBE			-820	mV	VCE = -5 V; IC = -10 mA; Tamb = 25 °C	3
collector capacitance	Cc			5	pF	VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C	3
transition frequency	fT	100			MHz	VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C	3
noise figure	NF			4	dB	VCE = -5 V; IC = -200 µA; RS = 2 kΩ; f = 10 Hz to 15.7 kHz; Tamb = 25 °C	3
collector-base voltage	VCBO			-50	V	open emitter	2
collector-emitter voltage	VCEO			-45	V	open base	2
emitter-base voltage	VEBO			-5	V	open collector	2
collector current	IC			-100	mA		2
peak collector current	ICM			-200	mA		2
peak base current	IBM			-200	mA		2
total power dissipation	Ptot			200	mW	Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided copper, tin-plated and standard footprint	2
junction temperature	Tj			150	°C		2
ambient temperature	Tamb	-65		150	°C		2
storage temperature	Tstg	-65		150	°C		2
thermal resistance from junction to ambient	Rth(j-a)			625	K/W	Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint	2
emitter capacitance	Ce		10		pF	VEB = -500 mV; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C	3

CAD (KiCad official)

Symbol: BC860BW
Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
3D model: SOT-323 (KiCad packages3D, STEP)
3D model files: bc860bw-etched.step / bc860bw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc860bw.step / bc860bw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Nexperia datasheet (7 pp, sha256 86d923bbc3049e8c, retrieved 2026-10-22, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF