component
BC858C
Public Made by Adomby adom
Guangdong Hottech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 27d ago |
| viewers | 27d ago |
| bc858c-etched.glb | 27d ago |
| bc858c-etched.step | 27d ago |
| bc858c-hero.glb | 27d ago |
| bc858c-hero.overlay.json | 27d ago |
| bc858c.glb | 27d ago |
| bc858c.kicad_mod | 27d ago |
| bc858c.kicad_sym | 27d ago |
| bc858c.lbr | 27d ago |
| bc858c.step | 27d ago |
| package.json | 27d ago |
| page.json | 21d ago |
| README.md | 21d ago |
BC858C
Guangdong Hottech · Bipolar (BJT) · SOT-23
BC858C from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the emitter-base voltage is rated VEBO -5 V and saturation is specified at IB = -5 mA with IC = -100 mA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage is -5 V at IE = -1 µA with IC = 0. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; for the BC858 the collector-emitter voltage VCEO is -30 V and the continuous collector current IC is -0.1 A, with collector power dissipation PC of 0.2 W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage (BC858) | VCBO | -30 | V | IC= -10μA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage (BC858) | VCEO | -30 | V | IC= -10mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | VEBO | -5 | V | IE= -1μA, IC=0 | 2 | ||
| Collector cut-off current (BC858) | ICBO | -0.1 | μA | VCB= -25 V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB= -5 V, IC=0 | 2 | ||
| DC current gain (BC857C, BC858C) | hFE | 420 | 800 | VCE= -5V, IC= -2mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-100mA, IB= -5 mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.1 | V | IC= -100mA, IB= -5mA | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE= -5 V, IC= -10mA, f=100MHz | 2 | ||
| Collector capacitance | Cob | 4.5 | pF | VCB=-10V, f=1MHz | 2 | ||
| Collector-base voltage (BC858) | VCBO | -30 | V | 1 | |||
| Collector-emitter voltage (BC858) | VCEO | -30 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current -continuous | IC | -0.1 | A | 1 | |||
| Collector power dissipation | PC | 0.2 | W | 1 | |||
| Junction temperature | TJ | 150 | 1 | ||||
| Storage temperature | Tstg | -55 | 150 | 1 |
CAD (KiCad official)
- Symbol:
BC858C - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc858c-etched.step/bc858c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc858c.step/bc858c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Guangdong Hottech datasheet (3 pp, sha256
40d30511a53e7bda, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).