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BC858BLT1G

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by adom

onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC858BLT1G

onsemi · Bipolar Transistors - BJT · SOT-23

BC858BLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor, with base current IB specified at -0.5 mA and -5.0 mA in the saturation test conditions.
2 EMITTER passive Emitter terminal of the PNP transistor, with emitter-base breakdown voltage V(BR)EBO of -5.0 V minimum and emitter-base voltage rating VEBO of -5.0 V.
3 COLLECTOR passive Collector terminal of the PNP transistor, rated for continuous collector current IC of -100 mA and peak collector current of -200 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -30 V BC858 column 1
Collector-Base Voltage VCBO -30 V BC858 column 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -100 mAdc 1
Collector Current - Peak IC -200 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation FR-5 Board PD 225 mW FR-5 Board, TA = 25°C 1
Total Device Dissipation Alumina Substrate PD 300 mW Alumina Substrate, TA = 25°C 1
Thermal Resistance, Junction-to-Ambient FR-5 Board RJA 556 °C/W FR-5 Board 1
Thermal Resistance, Junction-to-Ambient Alumina Substrate RJA 417 °C/W Alumina Substrate 1
Collector-Emitter Breakdown Voltage V(BR)CEO -30 V IC = -10 mA; BC858 series 2
Collector-Base Breakdown Voltage V(BR)CBO -30 V IC = -10 A; BC858 series 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -1.0 A; BC858 series 2
Collector Cutoff Current ICBO -15 nA VCB = -30 V 2
Collector Cutoff Current ICBO -4 A VCB = -30 V, TA = 150°C 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -10 mA, IB = -0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.7 V IC = -10 mA, IB = -0.5 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter On Voltage VBE(on) -0.6 V IC = -2.0 mA, VCE = -5.0 V 2
Base-Emitter On Voltage VBE(on) -0.75 V IC = -2.0 mA, VCE = -5.0 V 2
Base-Emitter On Voltage VBE(on) -0.82 V IC = -10 mA, VCE = -5.0 V 2
Current-Gain - Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz 2
Output Capacitance Cob 4.5 pF VCB = -10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz; BC858 series 2
Thermal Resistance, Junction-to-Ambient RJA 200 °C/W Figure 14 note: RJA = 200°C/W MAX 5
Thermal Resistance, Junction-to-Case RJC 83.3 °C/W Figure 14 note: RJC = 83.3°C/W MAX 5

CAD (KiCad official)

  • Symbol: BC858BLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc858blt1g-etched.step / bc858blt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc858blt1g.step / bc858blt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 5b3358db41b73faa, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF