component

BC858

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC858

Changjing · Bipolar (BJT) · SOT-23

BC858 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet limits the emitter-base voltage VEBO to -5 V.
2 EMITTER passive Emitter terminal of the PNP transistor; the datasheet limits the emitter-base voltage VEBO to -5 V and the continuous collector current IC to -0.1 A.
3 COLLECTOR passive Collector terminal of the PNP transistor; for the BC858 the collector-emitter voltage VCEO is -30 V and the collector-base voltage VCBO is -30 V.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage (BC858) VCBO -30 V 1
Collector-emitter voltage (BC858) VCEO -30 V 1
Emitter-base voltage VEBO -5 V 1
Collector current, continuous IC -0.1 A 1
Collector power dissipation PC 200 mW 1
Operating junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Thermal resistance, junction to ambient RΘJA 625 ℃/W 1
Collector-base breakdown voltage (BC858) VCBO -30 V IC= -10μA, IE=0 2
Collector-emitter breakdown voltage (BC858) VCEO -30 V IC= -10mA, IB=0 2
Emitter-base breakdown voltage VEBO -5 V IE= -1μA, IC=0 2
Collector cut-off current (BC858) ICBO -0.1 μA VCB= -25 V, IE=0 2
Emitter cut-off current IEBO -0.1 μA VEB= -5 V, IC=0 2
DC current gain, BC858A hFE 125 250 VCE= -5V,IC= -2mA 2
DC current gain, BC858B hFE 220 475 VCE= -5V,IC= -2mA 2
DC current gain, BC858C hFE 420 800 VCE= -5V,IC= -2mA 2
Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-100mA,IB= -5 mA 2
Base-emitter saturation voltage VBE(sat) -1.1 V IC= -100mA, IB= -5mA 2
Transition frequency fT 100 MHz VCE= -5 V, IC= -10mA, f=100MHz 2
Collector capacitance Cob 4.5 pF VCB=-10V, f=1MHz 2

CAD (KiCad official)

  • Symbol: BC858
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc858-etched.step / bc858-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc858.step / bc858.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 861906e9f22d0845, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF