component

BC857W

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC857W

Changjing · Bipolar (BJT) · SOT-323

BC857W from Changjing, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the datasheet gives no pin-specific limit, and the emitter-base voltage is limited to VEBO = -5 V in the maximum ratings.
2 EMITTER passive Emitter terminal of the PNP transistor; emitter-base voltage is limited to VEBO = -5 V and emitter current follows the -0.1 A continuous collector current rating.
3 COLLECTOR passive Collector terminal of the PNP transistor; collector-emitter voltage is rated -65 V (BC856W), -45 V (BC857W) or -30 V (BC858W), and continuous collector current is -0.1 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage (BC857W) VCBO -50 V IC= -10μA, IE=0 2
Collector-emitter breakdown voltage (BC857W) VCEO -45 V IC= -10mA, IB=0 2
Emitter-base breakdown voltage VEBO -5 V IE= -1μA, IC=0 2
DC current gain (BC857AW) hFE 125 250 VCE= -5V, IC= -2mA 2
DC current gain (BC857BW) hFE 220 475 VCE= -5V, IC= -2mA 2
DC current gain (BC857CW) hFE 420 800 VCE= -5V, IC= -2mA 2
Collector-emitter saturation voltage VCE(sat) -0.65 V IC=-100mA, IB= -5mA 2
Base-emitter saturation voltage VBE(sat) -1.1 V IC=-100mA, IB= -5mA 2
Collector cut-off current ICBO -15 nA VCB= -30 V, IE=0 2
Collector capacitance Cob 4.5 pF VCB=-10V, f=1MHz 2
Transition frequency fT 100 MHz VCE= -5V, IC= -10mA, f=100MHz 2
Collector-base voltage (BC857W) VCBO -50 V 1
Collector-emitter voltage (BC857W) VCEO -45 V 1
Emitter-base voltage VEBO -5 V 1
Collector current, continuous IC -0.1 A 1
Collector power dissipation PC* 150 mW 1
Junction temperature TJ 150 ℃ 1
Storage temperature Tstg -65 150 ℃ 1

CAD (KiCad official)

  • Symbol: BC857W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc857w-etched.step / bc857w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc857w.step / bc857w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (2 pp, sha256 bdb5a7c12720a101, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF