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Contents

README

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BC857W-QX

Nexperia · Bipolar (BJT) · SOT-323

BC857W-QX from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal; the datasheet limits peak base current IBM to -200 mA for this device family (BC856W-Q/BC857W-Q/BC858W-Q).
2 E passive Emitter terminal; the emitter-base voltage VEBO is limited to -5 V with open collector.
3 C passive Collector terminal; for BC857W-Q the collector-emitter voltage VCEO is -45 V (open base) and collector current IC is limited to -100 mA (peak ICM -200 mA).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -50 V IC = -100 µA; IE = 0 A 5
Collector-emitter breakdown voltage V(BR)CEO -45 V IC = -2 mA; IB = 0 A 5
Emitter-base breakdown voltage V(BR)EBO -5 V IC = 0 A; IE = -100 µA 5
Collector-base cut-off current ICBO -1 -15 nA VCB = -30 V; IE = 0 A 5
Collector-base cut-off current at Tj = 150 °C ICBO -4 µA VCB = -30 V; IE = 0 A; Tj = 150 °C 5
Emitter-base cut-off current IEBO -100 nA VEB = -5 V; IC = 0 A 5
DC current gain (BC857W-Q) hFE 125 800 VCE = -5 V; IC = -2 mA 5
Collector-emitter saturation voltage VCEsat -75 -300 mV IC = -10 mA; IB = -0.5 mA 5
Collector-emitter saturation voltage VCEsat -250 -600 mV IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
Base-emitter voltage VBE -600 -650 -750 mV VCE = -5 V; IC = -2 mA 5
Base-emitter voltage VBE -820 mV VCE = -5 V; IC = -10 mA 5
Transition frequency fT 100 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz 5
Noise figure NF 2 10 dB IC = -200 µA; VCE = -5 V; RS = 2 kΩ; f = 1 kHz; B = 200Hz 5
Collector-base voltage VCBO -50 V open emitter 3
Collector-emitter voltage VCEO -45 V open base 3
Emitter-base voltage VEBO -5 V open collector 3
Collector current IC -100 mA 3
Peak collector current ICM -200 mA 3
Peak base current IBM -200 mA 3
Total power dissipation Ptot 200 mW Tamb ≤ 25 °C 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance from junction to ambient Rth(j-a) 625 K/W in free air; FR4 PCB, single-sided, 35 µm copper, tin-plated, standard footprint 4

CAD (KiCad official)

  • Symbol: BC857W-QX
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc857w-qx-etched.step / bc857w-qx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc857w-qx.step / bc857w-qx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 4832a02efea5b89a, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF