component

BC857S

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbc857sfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
bc857s / README.md
History Download
Ray Publish 0.1.0 462e943 17d ago

BC857S

MSKSEMI · Bipolar (BJT) · SOT-363

BC857S from MSKSEMI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of PNP transistor 1 (VEBO max -5 V).
2 B1 passive Base of PNP transistor 1.
3 C2 passive Collector of PNP transistor 2 (VCEO max -45 V, IC max -0.2 A continuous).
4 E2 passive Emitter of PNP transistor 2 (VEBO max -5 V).
5 B2 passive Base of PNP transistor 2.
6 C1 passive Collector of PNP transistor 1 (VCEO max -45 V, IC max -0.2 A continuous).

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -50 V Ic=-10µA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -45 V Ic=-10mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10µA,IC=0 2
Collector cut-off current ICBO -15 nA VCB=-30V,IE=0 2
DC current gain hFE 125 630 VCE=-5V,IC=-2mA 2
Collector-emitter saturation voltage (1) VCE(sat)(1) -0.3 V IC=-10mA,IB=-0.5mA 2
Collector-emitter saturation voltage (2) VCE(sat)(2) -0.65 V IC=-100mA,IB=-5mA 2
Base-emitter voltage (1) VBE(1) -0.6 -0.75 V VCE=-5V,IC=-2mA 2
Base-emitter voltage (2) VBE(2) -0.82 V VCE=-5V,IC=-10mA 2
Transition frequency fT 200 MHz VCE=-5V,IC=-10mA,f=100MHz 2
Collector output capacitance Cob 3.5 pF VCB=-10V,IE=0,f=1MHz 2
Noise figure NF 2.5 dB VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2KΩ,BW=200Hz 2
Collector-base voltage VCBO -50 V 2
Collector-emitter voltage VCEO -45 V 2
Emitter-base voltage VEBO -5 V 2
Collector current (continuous) IC -0.2 A 2
Collector power dissipation PC 0.3 W 2
Junction temperature TJ 150 ℃ 2
Storage temperature Tstg -55 150 ℃ 2
Thermal resistance, junction to ambient RθJA 417 ℃/W 2

CAD (KiCad official)

  • Symbol: BC857S
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc857s-etched.step / bc857s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc857s.step / bc857s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (4 pp, sha256 48871c6a0415f454, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF