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BC857CLT3G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC857CLT3G

onsemi · Bipolar (BJT) · SOT-23

BC857CLT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the series is rated for emitter-base voltage VEBO of -5.0 V and continuous collector current of -100 mA.
2 EMITTER passive Emitter terminal of the PNP transistor; the BC857 series has emitter-base breakdown V(BR)EBO of -5.0 V minimum.
3 COLLECTOR passive Collector terminal of the PNP transistor; the BC857 series is rated for VCEO of -45 V and VCBO of -50 V, with -100 mA continuous and -200 mA peak collector current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (BC857 series) V(BR)CEO -45 V IC = −10 mA 3
Collector-Base Breakdown Voltage (BC857 series) V(BR)CBO -50 V IC = −10 µA 3
Emitter-Base Breakdown Voltage (BC857 series) V(BR)EBO -5 V IE = −1.0 µA 3
Collector Cutoff Current ICBO -15 nA VCB = −30 V 3
Collector Cutoff Current ICBO -4 µA VCB = −30 V, TA = 150°C 3
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = −10 mA, IB = −0.5 mA 3
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = −100 mA, IB = −5.0 mA 3
Base-Emitter On Voltage VBE(on) -0.6 V IC = −2.0 mA, VCE = −5.0 V 3
Base-Emitter On Voltage VBE(on) -0.75 V IC = −2.0 mA, VCE = −5.0 V 3
Base-Emitter On Voltage VBE(on) -0.82 V IC = −10 mA, VCE = −5.0 V 3
Current-Gain-Bandwidth Product fT 100 MHz IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz 3
Output Capacitance Cob 4.5 pF VCB = −10 V, f = 1.0 MHz 3
Noise Figure (BC857 series) NF 10 dB IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 3
Collector-Emitter Voltage (BC857) VCEO -45 V TA = 25°C 2
Collector-Base Voltage (BC857) VCBO -50 V TA = 25°C 2
Emitter-Base Voltage VEBO -5 V TA = 25°C 2
Collector Current - Continuous IC -100 mAdc 2
Collector Current - Peak IC -200 mAdc 2
Junction and Storage Temperature TJ, Tstg -55 150 °C 2
Total Device Dissipation (FR-5 board) PD 225 mW FR-5 board, TA = 25°C 2
Total Device Dissipation (Alumina substrate) PD 300 mW Alumina substrate, TA = 25°C 2
Thermal Resistance, Junction-to-Ambient (FR-5 board) RJA 556 °C/W FR-5 board 2
Thermal Resistance, Junction-to-Ambient (Alumina substrate) RJA 417 °C/W Alumina substrate 2
Thermal Resistance, Junction-to-Case RJC 83.3 °C/W Figure 13 note: ZJC(t) = r(t) RJC 6
Thermal Resistance, Junction-to-Ambient (transient note) RJA 200 °C/W Figure 13 note: ZJA(t) = r(t) RJA 6

CAD (KiCad official)

  • Symbol: BC857CLT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc857clt3g-etched.step / bc857clt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc857clt3g.step / bc857clt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 daeab23fa6c6ac7c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF