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BC857B_R1_00001

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PANJIT International Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC857B_R1_00001

PANJIT International · Bipolar (BJT) · SOT-23

BC857B_R1_00001 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the PNP transistor, with the emitter-base voltage limited to -5 V (VEBO) per the absolute ratings.
2 Emitter passive Emitter terminal of the PNP transistor, the reference for the base-emitter voltage and the -5 V VEBO rating.
3 Collector passive Collector terminal of the PNP transistor; for the BC857 device the collector-emitter voltage is -45 V and the continuous collector current is -100 mA (peak -200 mA).

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector - Emitter Breakdown Voltage (BC857A,B,C) V(BR)CEO -45 V IC=-10mA, IB=0 2
Collector - Base Breakdown Voltage (BC857A,B,C) V(BR)CBO -50 V IC =-10μA, IE=0 2
Emitter - Base Breakdown Voltage V(BR)EBO -5 V IE=-1μA, IC =0 2
Emitter-Base Cutoff Current IEBO -100 nA VEB=-5V 2
Collector-Base Cutoff Current ICBO -15 nA VCB=-30V, IE=0 2
Collector-Base Cutoff Current (TJ=150°C) ICBO -4 μA VCB=-30V, IE=0, TJ=150°C 2
DC Current Gain (BC857B group) hFE 150 IC=-10μA, VCE=-5V 2
DC Current Gain (BC857B group) hFE 180 290 520 IC=-2mA, VCE=-5V 2
Collector - Emitter Saturation Voltage VCE(SAT) -0.3 V IC=-10mA, IB=-0.5mA 2
Collector - Emitter Saturation Voltage VCE(SAT) -0.65 V IC=-100mA, IB=-5mA 2
Base - Emitter Saturation Voltage VBE(SAT) -0.7 V IC=-10mA, IB=-0.5mA 2
Base - Emitter Saturation Voltage VBE(SAT) -0.9 V IC=-100mA, IB=-5mA 2
Base - Emitter On Voltage VBE(ON) -0.6 -0.75 V IC=-2mA, VCE=-5V 2
Base - Emitter On Voltage VBE(ON) -0.82 V IC=-10mA, VCE=-5V 2
Collector - Base Capacitance CCB 4.5 pF VCB=-10V, IE=0, f=1MHz 2
Collector - Emitter Voltage (BC857) VCEO -45 V 1
Collector - Base Voltage (BC857) VCBO -50 V 1
Emitter - Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -100 mA 1
Peak Collector Current ICM -200 mA 1
Max Power Dissipation PTOT 330 mW Transistor mounted on FR-4 board 8 cm2 (Note 1) 1
Operating Junction and Storage Temperature Range TJ,TSTG -50 150 °C 1
Typical Thermal Resistance, Junction to Ambient RθJA 375 °C/W 1

CAD (KiCad official)

  • Symbol: BC857B_R1_00001
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc857b-r1-00001-etched.step / bc857b-r1-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc857b-r1-00001.step / bc857b-r1-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (5 pp, sha256 b768e2b14ba986ca, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF