component
BC856DW
Public Made by Adomby adom
CBI Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| bc856dw-etched.glb | 7d ago |
| bc856dw-etched.step | 7d ago |
| bc856dw-hero.glb | 7d ago |
| bc856dw-hero.overlay.json | 7d ago |
| bc856dw.glb | 7d ago |
| bc856dw.kicad_mod | 7d ago |
| bc856dw.kicad_sym | 7d ago |
| bc856dw.lbr | 7d ago |
| bc856dw.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
BC856DW
CBI · Bipolar (BJT) · SOT-363
BC856DW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of PNP transistor 1; collector-emitter voltage rated -65 V and collector current -0.1 A continuous per transistor. |
| 2 | B1 | passive | Base of PNP transistor 1; emitter-base voltage rating -5 V. |
| 3 | C2 | passive | Collector of PNP transistor 2; collector-base voltage rated -80 V and collector current -0.1 A continuous. |
| 4 | E2 | passive | Emitter of PNP transistor 2; collector-emitter voltage rated -65 V. |
| 5 | B2 | passive | Base of PNP transistor 2; emitter-base voltage rating -5 V. |
| 6 | C1 | passive | Collector of PNP transistor 1; collector-base voltage rated -80 V and collector current -0.1 A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | -80 | V | IC=-10A,IE=0 | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -65 | V | IC=-10mA,IB=0 | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-10A,IC=0 | 1 | ||
| Collector Cut-off Current | ICBO | -15 | nA | VCB=-30V,IE=0 | 1 | ||
| Emitter Cut-off Current | IEBO | -100 | nA | VEB=-5V,IC=0 | 1 | ||
| DC Current Gain | hFE | 110 | VCE=-5V,IC=-2mA | 1 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.1 | V | IC=-10mA, IB=-0.5mA | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | V | IC=-100mA, IB=-5mA; pulse test PW350μS, 2% | 1 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.7 | V | IC=-10mA, IB=-0.5mA | 1 | ||
| Output Capacitance | Cobo | 2.5 | pF | VCB=-10V, f=1MHz, IE=0 | 1 | ||
| Transition Frequency | fT | 100 | MHz | VCE=-5V, IC=-10mA, f=100MHz | 1 | ||
| Collector-Base Voltage | -80 | V | 1 | ||||
| Collector-Emitter Voltage | -65 | V | 1 | ||||
| Emitter-Base Voltage | -5 | V | 1 | ||||
| Collector Current -Continuous | -0.1 | A | 1 | ||||
| Collector Power Dissipation | 0.2 | W | 1 | ||||
| Thermal Resistance Junction to Ambient | 625 | /W | 1 | ||||
| Junction Temperature | 150 | °C | 1 | ||||
| Storage Temperature | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
BC856DW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
bc856dw-etched.step/bc856dw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc856dw.step/bc856dw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (3 pp, sha256
41962c216399edef, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).