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BC856BHZGT116

ROHM Semicon · Pre-Ordered Transistors · SOT-23

BC856BHZGT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the PNP transistor; the datasheet gives emitter-base breakdown BVEBO of -5V minimum at IE = -50uA.
2 B passive Base of the PNP transistor; VBE(on) is -600 to -750mV at VCE = -5V and IC = -2mA.
3 C passive Collector of the PNP transistor, rated for VCEO of -65V, VCBO of -80V and IC of -150mA maximum.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO -80 V IC = -50μA 2
Collector-emitter breakdown voltage BVCEO -65 V IC = -1mA 2
Emitter-base breakdown voltage BVEBO -5 V IE = -50μA 2
Collector cut-off current ICBO -15 nA VCB = -30V 2
Collector cut-off current ICBO -4 μA VCB = -30V, Ta = 150℃ 2
Collector-emitter saturation voltage VCE(sat)1 -300 mV IC = -10mA, IB = -0.5mA 2
Collector-emitter saturation voltage VCE(sat)2 -650 mV IC = -100mA, IB = -5mA 2
Base-emitter turn on voltage VBE(on) -600 -750 mV VCE = -5V, IC = -2mA 2
DC current gain hFE 220 290 475 - VCE = -5V, IC = -2mA 2
Collector current IC -150 mA 2
Collector-base voltage VCBO -80 V 2
Collector-emitter voltage VCEO -65 V 2
Emitter-base voltage VEBO -5 V 2
Power dissipation PD*1 200 mW *1 Each terminal mounted on a reference land 2
Power dissipation PD*2 350 mW *2 Mounted on a ceramic board (7.0×5.0×0.6mm) 2
Junction temperature Tj 150 ℃ 2
Range of storage temperature Tstg -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: BC856BHZGT116
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc856bhzgt116-etched.step / bc856bhzgt116-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc856bhzgt116.step / bc856bhzgt116.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (9 pp, sha256 d7d3e34ff087e6f1, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF