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BC856BDW1T1G

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onsemi Bipolar Transistors - BJT, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC856BDW1T1G

onsemi · Bipolar Transistors - BJT · SOT-363

BC856BDW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER 2 passive Emitter of the second PNP transistor (Q2), per Style 1 pin assignment for SOT-363/SC-88.
2 BASE 2 passive Base of the second PNP transistor (Q2), per Style 1 pin assignment for SOT-363/SC-88.
3 COLLECTOR 1 passive Collector of the first PNP transistor (Q1), per Style 1 pin assignment for SOT-363/SC-88.
4 EMITTER 1 passive Emitter of the first PNP transistor (Q1), per Style 1 pin assignment for SOT-363/SC-88.
5 BASE 1 passive Base of the first PNP transistor (Q1), per Style 1 pin assignment for SOT-363/SC-88.
6 COLLECTOR 2 passive Collector of the second PNP transistor (Q2), per Style 1 pin assignment for SOT-363/SC-88.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-363
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -65 V IC = -10 mA 2
Collector-Emitter Breakdown Voltage V(BR)CES -80 V IC = -10 A, VEB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO -80 V IC = -10 A 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -1.0 A 2
Collector Cutoff Current ICBO -15 nA VCB = -30 V 2
Collector Cutoff Current ICBO -4 µA VCB = -30 V, TA = 150C 2
DC Current Gain hFE 220 290 475 IC = -2.0 mA, VCE = -5.0 V (BC856B) 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -10 mA, IB = -0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.7 V IC = -10 mA, IB = -0.5 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter On Voltage VBE(on) -0.6 -0.75 V IC = -2.0 mA, VCE = -5.0 V 2
Base-Emitter On Voltage VBE(on) -0.82 V IC = -10 mA, VCE = -5.0 V 2
Current-Gain - Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz 2
Output Capacitance Cob 4.5 pF VCB = -10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 2
Collector-Emitter Voltage VCEO -65 V BC856, SBC856 1
Collector-Base Voltage VCBO -80 V BC856, SBC856 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -100 mAdc 1
Collector Current - Peak IC -200 mAdc 1
Total Device Dissipation Per Device PD 250 mW FR-5 Board, TA = 25 C 1
Thermal Resistance, Junction-to-Ambient RJA 328 C/W 1
Junction and Storage Temperature Range TJ, Tstg -55 150 C 1

CAD (KiCad official)

  • Symbol: BC856BDW1T1G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc856bdw1t1g-etched.step / bc856bdw1t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc856bdw1t1g.step / bc856bdw1t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 cd27e0725720eeb0, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF