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BC856A_R1_00001

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PANJIT International Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC856A_R1_00001

PANJIT International · Bipolar (BJT) · SOT-23

BC856A_R1_00001 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the PNP transistor; the emitter-base voltage is limited to -5 V (VEBO) and the base drives collector current up to -100 mA continuous.
2 Emitter passive Emitter terminal of the PNP transistor; emitter-base voltage is rated at -5 V (VEBO) and the emitter carries the collector current, rated at -100 mA continuous and -200 mA peak.
3 Collector passive Collector terminal of the PNP transistor; collector-emitter voltage is rated -65 V (BC856), -45 V (BC857) or -30 V (BC858/BC859), with -100 mA continuous and -200 mA peak collector current.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector - Emitter Breakdown Voltage (BC856A,B) V(BR)CEO -65 V IC=-10mA, IB=0 2
Collector - Base Breakdown Voltage (BC856A,B) V(BR)CBO -80 V IC=-10μA, IE=0 2
Emitter - Base Breakdown Voltage V(BR)EBO -5 V IE=-1μA, IC=0 2
Emitter-Base Cutoff Current IEBO -100 nA VEB=-5V 2
Collector-Base Cutoff Current ICBO -15 nA VCB=-30V, IE=0 2
Collector-Base Cutoff Current at TJ=150°C ICBO -4 μA VCB=-30V, IE=0, TJ=150°C 2
DC Current Gain (BC856A group) hFE 110 220 420 IC=-2mA, VCE=-5V 2
Collector - Emitter Saturation Voltage VCE(SAT) -0.3 V IC=-10mA, IB=-0.5mA 2
Collector - Emitter Saturation Voltage VCE(SAT) -0.65 V IC=-100mA, IB=-5mA 2
Base - Emitter Saturation Voltage VBE(SAT) -0.7 V IC=-10mA, IB=-0.5mA 2
Base - Emitter Saturation Voltage VBE(SAT) -0.9 V IC=-100mA, IB=-5mA 2
Base - Emitter On Voltage VBE(ON) -0.6 V IC=-2mA, VCE=-5V 2
Base - Emitter On Voltage VBE(ON) -0.75 V IC=-2mA, VCE=-5V 2
Base - Emitter On Voltage VBE(ON) -0.82 V IC=-10mA, VCE=-5V 2
Collector - Base Capacitance CCB 4.5 pF VCB=-10V, IE=0, f=1MHz 2
Collector - Emitter Voltage VCEO -65 V 1
Collector - Base Voltage VCBO -80 V 1
Emitter - Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -100 mA 1
Peak Collector Current ICM -200 mA 1
Max Power Dissipation PTOT 330 mW Note 1: transistor mounted on FR-4 board 8 cm2 1
Operating Junction and Storage Temperature Range TJ,TSTG -50 150 °C 1
Typical Thermal Resistance, Junction to Ambient RθJA 375 °C/W 1

CAD (KiCad official)

  • Symbol: BC856A_R1_00001
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc856a-r1-00001-etched.step / bc856a-r1-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc856a-r1-00001.step / bc856a-r1-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (5 pp, sha256 75a148ced304a2f7, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF