component
BC856
Public Made by Adomby adom
HT Shenzhen Jinyu Semicon Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| bc856-etched.glb | 23d ago |
| bc856-etched.step | 23d ago |
| bc856-hero.glb | 23d ago |
| bc856-hero.overlay.json | 23d ago |
| bc856.glb | 23d ago |
| bc856.kicad_mod | 23d ago |
| bc856.kicad_sym | 23d ago |
| bc856.lbr | 23d ago |
| bc856.step | 23d ago |
| package.json | 23d ago |
| page.json | 17d ago |
| README.md | 17d ago |
BC856
HT Shenzhen Jinyu Semicon · Bipolar Transistors - BJT · SOT-23
BC856 from HT Shenzhen Jinyu Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the device is rated for a collector current of -0.1 A continuous and an emitter-base voltage of -5 V (VEBO). |
| 2 | EMITTER | passive | Emitter terminal; the total collector power dissipation is rated at 200 mW and the junction temperature at 150 ℃ maximum. |
| 3 | COLLECTOR | passive | Collector terminal; the collector-base voltage is -80 V (BC856), -50 V (BC857) or -30 V (BC858), and the collector-emitter voltage is -65 V (BC856), -45 V (BC857) or -30 V (BC858). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HT Shenzhen Jinyu Semicon |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage (BC856) | VCEO | -65 | V | IC= -10mA, IB=0 | 2 | ||
| Collector-base breakdown voltage (BC856) | VCBO | -80 | V | IC= -10μA, IE=0 | 2 | ||
| Emitter-base breakdown voltage | VEBO | -5 | V | IE= -1μA, IC=0 | 2 | ||
| Collector cut-off current (BC856) | ICBO | -0.1 | μA | VCB= -70 V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB= -5 V, IC=0 | 2 | ||
| DC current gain (BC856A) | hFE | 125 | 250 | VCE= -5V, IC= -2mA | 2 | ||
| DC current gain (BC856B) | hFE | 220 | 475 | VCE= -5V, IC= -2mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-100mA, IB= -5 mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.1 | V | IC= -100mA, IB= -5mA | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE= -5 V, IC= -10mA, f=100MHz | 2 | ||
| Collector capacitance | Cob | 4.5 | pF | VCB=-10V, f=1MHz | 2 | ||
| Collector-base voltage (BC856) | VCBO | -80 | V | 1 | |||
| Collector-emitter voltage (BC856) | VCEO | -65 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current, continuous | IC | -0.1 | A | 1 | |||
| Collector power dissipation | PC | 200 | mW | TA=25℃ | 1 | ||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -65 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
BC856 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc856-etched.step/bc856-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc856.step/bc856.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HT Shenzhen Jinyu Semicon datasheet (5 pp, sha256
4399493a16bd9085, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).