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BC850CLT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC850CLT1G

onsemi · Bipolar (BJT) · SOT-23

BC850CLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the BC850 emitter-base voltage rating is VEBO 6.0 V maximum.
2 EMITTER passive Emitter terminal of the NPN transistor; the BC850 emitter-base voltage rating is VEBO 6.0 V maximum.
3 COLLECTOR passive Collector terminal of the NPN transistor; the BC850 maximum ratings are VCEO 45 V, VCBO 50 V and continuous collector current IC 100 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 45 Vdc BC847, BC850 column 1
Collector-Base Voltage VCBO 50 Vdc BC847, BC850 column 1
Emitter-Base Voltage VEBO 6 Vdc BC847, BC850 column 1
Collector Current - Continuous IC 100 mAdc 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Total Device Dissipation, FR-5 Board PD 225 mW TA = 25°C (Note 1); derate above 25°C 1.8 mW/°C 1
Total Device Dissipation, Alumina Substrate PD 300 mW TA = 25°C (Note 2); derate above 25°C 2.4 mW/°C 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RJA 556 °C/W Note 1 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RJA 417 °C/W Note 2 1
Collector-Emitter Breakdown Voltage BC847A,B,C, BC850B,C V(BR)CEO 45 V IC = 10 mA 2
Collector-Emitter Breakdown Voltage BC847A,B,C, BC850B,C V(BR)CES 50 V IC = 10 µA, VEB = 0 2
Collector-Base Breakdown Voltage BC847A,B,C, BC850B,C V(BR)CBO 50 V IC = 10 µA 2
Emitter-Base Breakdown Voltage BC847A,B,C, BC850B,C V(BR)EBO 6 V IE = 1.0 µA 2
Collector Cutoff Current ICBO 15 nA VCB = 30 V 2
Collector Cutoff Current ICBO 5 µA VCB = 30 V, TA = 150°C 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) 0.7 V IC = 10 mA, IB = 0.5 mA 2
Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC = 100 mA, IB = 5.0 mA 2
Base-Emitter Voltage VBE(on) 580 660 mV IC = 2.0 mA, VCE = 5.0 V 2
Base-Emitter Voltage VBE(on) 700 770 mV IC = 10 mA, VCE = 5.0 V 2
Current-Gain - Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 2
Noise Figure (BC849B,C, BC850B,C) NF 4 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 2

CAD (KiCad official)

  • Symbol: BC850CLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc850clt1g-etched.step / bc850clt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc850clt1g.step / bc850clt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 19f93da5635325df, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF