component

BC850BW

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC850BW

Nexperia · Bipolar (BJT) · SOT-323

BC850BW from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 base input Base terminal of the NPN transistor (PINNING table, page 3).
2 emitter passive Emitter terminal of the NPN transistor (PINNING table, page 3).
3 collector passive Collector terminal of the NPN transistor; collector-emitter voltage is limited to -45 V for BC850W and collector current to -100 mA DC (limiting values, page 3).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage (BC850W) VCBO -50 V open emitter 3
Collector-emitter voltage (BC850W) VCEO -45 V open base 3
Emitter-base voltage VEBO -5 V open collector 3
Collector current (DC) IC -100 mA 3
Peak collector current ICM -200 mA 3
Peak base current IBM -200 mA 3
Total power dissipation Ptot 200 mW Tamb ≤ 25 °C; note 1 3
Storage temperature Tstg -65 150 °C 3
Junction temperature Tj 150 °C 3
Operating ambient temperature Tamb -65 150 °C 3
Thermal resistance from junction to ambient Rth j-a 625 K/W note 1 (FR4 printed-circuit board) 4
Collector cut-off current ICBO 15 nA IE = 0; VCB = 30 V 4
Collector cut-off current at Tj = 150 °C ICBO 5 μA IE = 0; VCB = 30 V; Tj = 150 °C 4
Emitter cut-off current IEBO 100 nA IC = 0; VEB = 5 V 4
DC current gain (BC849BW; BC850BW) hFE 200 450 IC = 2 mA; VCE = 5 V; see Figs 2 and 3 4
Collector-emitter saturation voltage VCEsat 250 mV IC = 10 mA; IB = 0.5 mA 4
Collector-emitter saturation voltage VCEsat 600 mV IC = 100 mA; IB = 5 mA; note 1 4
Base-emitter voltage VBE 580 700 mV IC = 2 mA; VCE = 5 V 4
Base-emitter voltage VBE 770 mV IC = 10 mA; VCE = 5 V 4
Collector capacitance Cc 3 pF IE = ie = 0; VCB = 10 V; f = 1 MHz 4
Transition frequency fT 100 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz 4
Noise figure F 4 dB IC = 200 μA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz 4

CAD (KiCad official)

  • Symbol: BC850BW
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc850bw-etched.step / bc850bw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc850bw.step / bc850bw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 5c01de813bd3be7c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF