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BC849CW

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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BC849CW

Nexperia · Bipolar (BJT) · SOT-323

BC849CW from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 base passive Base terminal of the BC849CW NPN general purpose transistor; the datasheet gives no pin-specific limit for this pin beyond the device limiting values (VEBO −5 V, IBM −200 mA peak).
2 emitter passive Emitter terminal of the BC849CW NPN transistor; the datasheet gives no pin-specific limit for this pin beyond the device limiting values (VEBO −5 V, IC −100 mA DC).
3 collector passive Collector terminal of the BC849CW NPN transistor; the datasheet gives no pin-specific limit for this pin beyond the device limiting values (BC849W VCEO −30 V, IC −100 mA DC).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 30 V open emitter 3
collector-emitter voltage VCEO 30 V open base 3
emitter-base voltage VEBO 5 V open collector 3
collector current (DC) IC 100 mA 3
peak collector current ICM 200 mA 3
peak base current IBM 200 mA 3
total power dissipation Ptot 200 mW Tamb ≤ 25 °C; note 1 3
storage temperature Tstg -65 150 °C 3
junction temperature Tj 150 °C 3
operating ambient temperature Tamb -65 150 °C 3
thermal resistance from junction to ambient Rth j-a 625 K/W note 1 4
collector cut-off current ICBO 15 nA IE = 0; VCB = 30 V 4
collector cut-off current ICBO 5 μA IE = 0; VCB = 30 V; Tj = 150 °C 4
emitter cut-off current IEBO 100 nA IC = 0; VEB = 5 V 4
DC current gain (BC849CW; BC850CW) hFE 420 800 IC = 2 mA; VCE = 5 V 4
collector-emitter saturation voltage VCEsat 250 mV IC = 10 mA; IB = 0.5 mA 4
collector-emitter saturation voltage VCEsat 600 mV IC = 100 mA; IB = 5 mA; note 1 4
base-emitter voltage VBE 580 700 mV IC = 2 mA; VCE = 5 V 4
base-emitter voltage VBE 770 mV IC = 10 mA; VCE = 5 V 4
collector capacitance Cc 3 pF IE = ie = 0; VCB = 10 V; f = 1 MHz 4
transition frequency fT 100 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz 4
noise figure F 4 dB IC = 200 μA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz 4

CAD (KiCad official)

  • Symbol: BC849CW
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc849cw-etched.step / bc849cw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc849cw.step / bc849cw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 5c01de813bd3be7c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF