component
BC848CW
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MSKSEMI Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BC848CW
MSKSEMI · Bipolar (BJT) · SOT-323
BC848CW from MSKSEMI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; for the BC848W family the datasheet lists VEBO of 5 V maximum and a collector current of 0.1 A continuous. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; for the BC848W the datasheet lists an emitter-base voltage (VEBO) of 5 V maximum. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; for the BC848W the datasheet lists VCBO of 30 V and VCEO of 30 V maximum, with 0.1 A continuous collector current and 150 mW collector power dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage (BC848W column) | VCBO | 30 | V | 2 | |||
| Collector-emitter voltage (BC848W column) | VCEO | 30 | V | 2 | |||
| Emitter-base voltage (BC848W column) | VEBO | 5 | V | 2 | |||
| Collector current, continuous | IC | 0.1 | A | 2 | |||
| Collector power dissipation | PC | 150 | mW | 2 | |||
| Operating junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 2 | ||
| Thermal resistance, junction to ambient | RθJA | 833 | ℃/W | 2 | |||
| Collector-base breakdown voltage (BC848W) | VCBO | 30 | V | IC= 10µA, IE=0 | 3 | ||
| Collector-emitter breakdown voltage (BC848W) | VCEO | 30 | V | IC= 10mA, IB=0 | 3 | ||
| Emitter-base breakdown voltage (BC848W) | VEBO | 5 | V | IE= 1 µA, IC=0 | 3 | ||
| Base-emitter voltage, 2 mA row | VBE(on) | 580 | 660 | 700 | mV | VCE= 5V, IC= 2mA | 3 |
| Base-emitter voltage, 10 mA row | VBE(on) | 770 | mV | VCE= 5V, IC= 10mA | 3 | ||
| Collector-emitter saturation voltage, 10 mA row | VCE(sat) | 0.25 | V | IC=10mA, IB=0. 5mA | 3 | ||
| Collector-emitter saturation voltage, 100 mA row | VCE(sat) | 0.6 | V | IC=100mA, IB= 5mA | 3 | ||
| Base-emitter saturation voltage, 10 mA row | VBE(sat) | 0.7 | V | IC=10mA, IB=0. 5mA | 3 | ||
| Base-emitter saturation voltage, 100 mA row | VBE(sat) | 0.9 | V | IC=100mA, IB= 5mA | 3 | ||
| Collector cutoff current | ICBO | 15 | nA | VCB=30V | 3 | ||
| Transition frequency | fT | 100 | MHz | VCE= 5 V, IC= 10mA f=100MHz | 3 | ||
| Collector output capacitance | Cob | 4.5 | pF | VCB=10V,f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
BC848CW - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
bc848cw-etched.step/bc848cw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc848cw.step/bc848cw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (6 pp, sha256
0672fb1f88aef9aa, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC848CW
**MSKSEMI** · Bipolar (BJT) · SOT-323
BC848CW from MSKSEMI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; for the BC848W family the datasheet lists VEBO of 5 V maximum and a collector current of 0.1 A continuous. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; for the BC848W the datasheet lists an emitter-base voltage (VEBO) of 5 V maximum. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; for the BC848W the datasheet lists VCBO of 30 V and VCEO of 30 V maximum, with 0.1 A continuous collector current and 150 mW collector power dissipation. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage (BC848W column) | VCBO | | | 30 | V | | 2 |
| Collector-emitter voltage (BC848W column) | VCEO | | | 30 | V | | 2 |
| Emitter-base voltage (BC848W column) | VEBO | | | 5 | V | | 2 |
| Collector current, continuous | IC | | | 0.1 | A | | 2 |
| Collector power dissipation | PC | | | 150 | mW | | 2 |
| Operating junction and storage temperature range | TJ,Tstg | -55 | | 150 | ℃ | | 2 |
| Thermal resistance, junction to ambient | RθJA | | 833 | | ℃/W | | 2 |
| Collector-base breakdown voltage (BC848W) | VCBO | 30 | | | V | IC= 10µA, IE=0 | 3 |
| Collector-emitter breakdown voltage (BC848W) | VCEO | 30 | | | V | IC= 10mA, IB=0 | 3 |
| Emitter-base breakdown voltage (BC848W) | VEBO | 5 | | | V | IE= 1 µA, IC=0 | 3 |
| Base-emitter voltage, 2 mA row | VBE(on) | 580 | 660 | 700 | mV | VCE= 5V, IC= 2mA | 3 |
| Base-emitter voltage, 10 mA row | VBE(on) | | | 770 | mV | VCE= 5V, IC= 10mA | 3 |
| Collector-emitter saturation voltage, 10 mA row | VCE(sat) | | | 0.25 | V | IC=10mA, IB=0. 5mA | 3 |
| Collector-emitter saturation voltage, 100 mA row | VCE(sat) | | | 0.6 | V | IC=100mA, IB= 5mA | 3 |
| Base-emitter saturation voltage, 10 mA row | VBE(sat) | | | 0.7 | V | IC=10mA, IB=0. 5mA | 3 |
| Base-emitter saturation voltage, 100 mA row | VBE(sat) | | | 0.9 | V | IC=100mA, IB= 5mA | 3 |
| Collector cutoff current | ICBO | | | 15 | nA | VCB=30V | 3 |
| Transition frequency | fT | 100 | | | MHz | VCE= 5 V, IC= 10mA f=100MHz | 3 |
| Collector output capacitance | Cob | | | 4.5 | pF | VCB=10V,f=1MHz | 3 |
## CAD (KiCad official)
- Symbol: `BC848CW`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `bc848cw-etched.step` / `bc848cw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc848cw.step` / `bc848cw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590455367382695936) (6 pp, sha256 `0672fb1f88aef9aa`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc848cw-datasheet.pdf)