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BC848CDW1T1G

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onsemi Bipolar Transistors - BJT, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC848CDW1T1G

onsemi · Bipolar Transistors - BJT · SOT-363

BC848CDW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER 2 passive Emitter of transistor Q2 (NPN), per case 419B Style 1.
2 BASE 2 input Base of transistor Q2 (NPN), per case 419B Style 1.
3 COLLECTOR 1 passive Collector of transistor Q1 (NPN), per case 419B Style 1; BC848 VCEO is 30 V and IC is 100 mAdc max.
4 EMITTER 1 passive Emitter of transistor Q1 (NPN), per case 419B Style 1.
5 BASE 1 input Base of transistor Q1 (NPN), per case 419B Style 1; BC848 VEBO is 5.0 V max.
6 COLLECTOR 2 passive Collector of transistor Q2 (NPN), per case 419B Style 1; BC848 VCEO is 30 V and IC is 100 mAdc max.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-363
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC = 10 mA 2
Collector-Base Breakdown Voltage V(BR)CBO 30 V IC = 10 µA 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 1.0 µA 2
Collector Cutoff Current ICBO 15 nA VCB = 30 V 2
Collector Cutoff Current ICBO 5 µA VCB = 30 V, TA = 150°C 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 2
Base-Emitter Voltage VBE(on) 580 mV IC = 2.0 mA, VCE = 5.0 V 2
Base-Emitter Voltage VBE(on) 700 mV IC = 2.0 mA, VCE = 5.0 V 2
Base-Emitter Voltage VBE(on) 770 mV IC = 10 mA, VCE = 5.0 V 2
Current-Gain - Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 2
Collector-Emitter Voltage VCEO 30 V BC848 column 1
Collector-Base Voltage VCBO 30 V BC848 column 1
Emitter-Base Voltage VEBO 5 V BC848 column 1
Collector Current - Continuous IC 100 mAdc 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Total Device Dissipation Per Device FR-5 Board PD 380 mW FR-5 Board (Note 1), TA = 25°C 1
Total Device Dissipation Per Device (second board) PD 250 mW 1
Derate Above 25°C PD 3 mW/°C Derate above 25°C 1
Thermal Resistance, Junction to Ambient RJA 328 °C/W 1

CAD (KiCad official)

  • Symbol: BC848CDW1T1G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc848cdw1t1g-etched.step / bc848cdw1t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc848cdw1t1g.step / bc848cdw1t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 0887a1ed0ae9789a, retrieved 2026-11-07, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF