component
BC848BWT106
Public Made by Adomby adom
ROHM Semicon Bipolar Transistors - BJT, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownBC848BWT106
ROHM Semicon · Bipolar Transistors - BJT · SOT-323
BC848BWT106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of the NPN transistor; the emitter-base breakdown voltage BVEBO is 5 V minimum and the emitter-base voltage VEBO is rated at 5 V. |
| 2 | Base | input | Base terminal of the NPN transistor, driven to set the collector current, with a base-emitter saturation voltage VBE(sat) of 0.77 V maximum at IC/IB = 10 mA/0.5 mA. |
| 3 | Collector | passive | Collector terminal of the NPN transistor, rated for a collector-emitter voltage VCEO of 30 V, collector-base voltage VCBO of 30 V and collector current IC of 0.1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 30 | V | IC=50µA | 1 | ||
| Collector-emitter breakdown voltage | BVCEO | 30 | V | IC=1mA | 1 | ||
| Emitter-base breakdown voltage | BVEBO | 5 | V | IE=50µA | 1 | ||
| Collector cutoff current | ICBO | 100 | nA | VCB=30V | 1 | ||
| Collector cutoff current | ICBO | 5 | µA | VCB=30V, Ta=150°C | 1 | ||
| Base-emitter saturation voltage / base-emitter on voltage | VBE(on) | 0.58 | 0.77 | V | VCE/IC=5V/10mA | 1 | |
| Collector-emitter saturation voltage | VCE(sat) | 0.6 | V | IC/IB=100mA/5mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.25 | V | IC/IB=10mA/0.5mA | 1 | ||
| DC current transfer ratio | hFE | 200 | 450 | - | VCE/IC=5V/2mA | 1 | |
| Collector-base voltage | VCBO | 30 | V | Ta=25°C | 1 | ||
| Collector-emitter voltage | VCEO | 30 | V | Ta=25°C | 1 | ||
| Emitter-base voltage | VEBO | 5 | V | Ta=25°C | 1 | ||
| Collector current | IC | 0.1 | A | Ta=25°C | 1 | ||
| Collector power dissipation | PC | 0.2 | W | When mounted on a 7×5×0.6mm ceramic board | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 1 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
BC848BWT106 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323, generated on the KiCad land (body 1.25 x 2 mm, terminals on the pads, 0.9 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
bc848bwt106-etched.step/bc848bwt106-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc848bwt106.step/bc848bwt106.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (6 pp, sha256
ba1f2af69d13ada7, retrieved 2026-11-13, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).