component

BC848BT116

Public Made by Adom

by adom

ROHM Semicon Bipolar (BJT), TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbc848bt116factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

BC848BT116

ROHM Semicon · Bipolar (BJT) · TO-236-3(SOT-23-3)

BC848BT116 from ROHM Semicon, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the NPN transistor; emitter-base breakdown voltage BVEBO is 5V minimum at IE=50µA.
2 Base passive Base terminal of the NPN transistor; emitter-base voltage VEBO is limited to 5V maximum.
3 Collector passive Collector terminal of the NPN transistor; VCEO is 30V maximum and collector current IC is 100mA maximum.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-236-3(SOT-23-3)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO 30 V IC = 50μA 2
Collector-emitter breakdown voltage BVCEO 30 V IC = 1mA 2
Emitter-base breakdown voltage BVEBO 5 V IE = 50μA 2
Collector cut-off current ICBO 100 nA VCB = 30V 2
Collector cut-off current ICBO 5 μA VCB = 30V, Ta = 150℃ 2
Collector-emitter saturation voltage VCE(sat)1 250 mV IC = 10mA, IB = 0.5mA 2
Collector-emitter saturation voltage VCE(sat)2 600 mV IC = 100mA, IB = 5mA 2
Base-emitter turn on voltage VBE(on) 580 770 mV VCE = 5V, IC = 10mA 2
DC current gain hFE 200 450 - VCE = 5V, IC = 2mA 2
Collector current IC 100 mA 2
Collector-base voltage VCBO 30 V 2
Collector-emitter voltage VCEO 30 V 2
Emitter-base voltage VEBO 5 V 2
Power dissipation PD 200 mW *1 Each terminal mounted on a reference land 2
Power dissipation PD 350 mW *2 Mounted on a ceramic board (7.0×5.0×0.6mm) 2
Junction temperature Tj 150 ℃ 2
Range of storage temperature Tstg -65 150 ℃ 2

CAD (KiCad official)

  • Symbol: BC848BT116
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: bc848bt116-etched.step / bc848bt116-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc848bt116.step / bc848bt116.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (8 pp, sha256 d41ae22540f15872, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF