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BC847PNQ-7R-F

Diodes Incorporated · Bipolar Transistors - BJT · SOT-363

BC847PNQ-7R-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of the NPN transistor Q1 (BC847B type), with absolute maximum emitter-base voltage VEBO 6 V and peak emitter current IEM 200 mA.
2 B1 passive Base of the NPN transistor Q1 (BC847B type), with device limits of VEBO 6 V and collector current IC 100 mA maximum.
3 C2 passive Collector of the PNP transistor Q2 (BC857B type), with absolute maximum VCBO -50 V, VCEO -45 V and IC -100 mA.
4 E2 passive Emitter of the PNP transistor Q2 (BC857B type), with absolute maximum emitter-base voltage VEBO -6 V and peak emitter current IEM -200 mA.
5 B2 passive Base of the PNP transistor Q2 (BC857B type), with device limits of VEBO -6 V and collector current IC -100 mA.
6 C1 passive Collector of the NPN transistor Q1 (BC847B type), with absolute maximum VCBO 50 V, VCEO 45 V and IC 100 mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage (NPN, BC847B Q1) BVCBO 50 V IC = 100µA 3
Collector-Emitter Breakdown Voltage (NPN, BC847B Q1) BVCEO 45 V IC = 10mA 3
Emitter-Base Breakdown Voltage (NPN, BC847B Q1) BVEBO 6 V IE = 100µA 3
DC Current Gain (NPN, BC847B Q1) hFE 200 290 450 VCE = 5V, IC = 2mA 3
Collector-Emitter Saturation Voltage (NPN, BC847B Q1) VCE(sat) 90 250 mV IC = 10mA, IB = 0.5mA 3
Collector-Emitter Saturation Voltage (NPN, BC847B Q1) VCE(sat) 200 600 mV IC = 100mA, IB = 5mA 3
Base-Emitter Voltage (NPN, BC847B Q1) VBE(on) 580 660 700 mV VCE = 5V, IC = 2mA 3
Base-Emitter Voltage (NPN, BC847B Q1) VBE(on) 770 mV VCE = 5V, IC = 10mA 3
Collector-Cutoff Current (NPN, BC847B Q1) ICBO 15 nA VCB = 30V 3
Collector-Cutoff Current (NPN, BC847B Q1) ICBO 5 µA VCB = 30V, TA = +150°C 3
Gain Bandwidth Product (NPN, BC847B Q1) fT 100 300 MHz VCE = 5V, IC = 10mA, f = 100MHz 3
Collector-Base Capacitance (NPN, BC847B Q1) Ccbo 3.5 6 pF VCB = 10V, f = 1MHz 3
Noise Figure (NPN, BC847B Q1) NF 2 10 dB VCE = 5V, IC = 200µA, Rg = 2kΩ, f = 1kHz, f = 200Hz 3
Collector-Base Breakdown Voltage (PNP, BC857B Q2) BVCBO -50 V IC = -100µA 4
Collector-Emitter Breakdown Voltage (PNP, BC857B Q2) BVCEO -45 V IC = -10mA 4
Emitter-Base Breakdown Voltage (PNP, BC857B Q2) BVEBO -6 V IE = -100µA 4
DC Current Gain (PNP, BC857B Q2) hFE 220 290 475 VCE = -5V, IC = -2mA 4
Collector-Emitter Saturation Voltage (PNP, BC857B Q2) VCE(sat) -75 -300 mV IC = -10mA, IB = -0.5mA 4
Collector-Emitter Saturation Voltage (PNP, BC857B Q2) VCE(sat) -250 -650 mV IC = -100mA, IB = -5mA 4
Base-Emitter Saturation Voltage (PNP, BC857B Q2) VBE(sat) -850 -950 mV IC = -100mA, IB = -5mA 4
Base-Emitter Voltage (PNP, BC857B Q2) VBE(on) -600 -650 -750 mV VCE = -5V, IC = -2mA 4
Base-Emitter Voltage (PNP, BC857B Q2) VBE(on) -820 mV VCE = -5V, IC = -10mA 4
Collector-Cutoff Current (PNP, BC857B Q2) ICBO -15 nA VCB = -30V 4
Collector-Cutoff Current (PNP, BC857B Q2) ICBO -4 µA VCB = -30V, TA = +150°C 4
Gain Bandwidth Product (PNP, BC857B Q2) fT 100 200 MHz VCE = -5V, IC = -10mA, f = 100MHz 4
Collector-Base Capacitance (PNP, BC857B Q2) Ccbo 3 4.5 pF VCB = -10V, f = 1MHz 4
Noise Figure (PNP, BC857B Q2) NF 10 dB VCE = -5V, IC = -200µA, Rg = 2kΩ, f = 1kHz, f = 200Hz 4
Collector-Base Voltage (NPN, BC847B Q1) absolute maximum VCBO 50 V TA = +25°C 2
Collector-Emitter Voltage (NPN, BC847B Q1) absolute maximum VCEO 45 V TA = +25°C 2
Emitter-Base Voltage (NPN, BC847B Q1) absolute maximum VEBO 6 V TA = +25°C 2
Collector Current (NPN, BC847B Q1) absolute maximum IC 100 mA TA = +25°C 2
Peak Collector Current (NPN, BC847B Q1) absolute maximum ICM 200 mA TA = +25°C 2
Peak Emitter Current (NPN, BC847B Q1) absolute maximum IEM 200 mA TA = +25°C 2
Collector-Base Voltage (PNP, BC857B Q2) absolute maximum VCBO -50 V TA = +25°C 2
Collector-Emitter Voltage (PNP, BC857B Q2) absolute maximum VCEO -45 V TA = +25°C 2
Emitter-Base Voltage (PNP, BC857B Q2) absolute maximum VEBO -6 V TA = +25°C 2
Collector Current (PNP, BC857B Q2) absolute maximum IC -100 mA TA = +25°C 2
Peak Collector Current (PNP, BC857B Q2) absolute maximum ICM -200 mA TA = +25°C 2
Peak Emitter Current (PNP, BC857B Q2) absolute maximum IEM -200 mA TA = +25°C 2
Power Dissipation, Total Device PD 200 mW Total device, TA = +25°C (Note 6) 2
Thermal Resistance, Junction to Ambient RJA 625 °C/W Minimum recommended pad layout, 1oz copper, single-sided 1.6mm FR-4, still air, steady state (Note 5) 2
Operating and Storage Temperature Range TJ, TSTG -65 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: BC847PNQ-7R-F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc847pnq-7r-f-etched.step / bc847pnq-7r-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847pnq-7r-f.step / bc847pnq-7r-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 8d52299dad810618, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF