component
BC847PNQ-7R-F
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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BC847PNQ-7R-F
Diodes Incorporated · Bipolar Transistors - BJT · SOT-363
BC847PNQ-7R-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the NPN transistor Q1 (BC847B type), with absolute maximum emitter-base voltage VEBO 6 V and peak emitter current IEM 200 mA. |
| 2 | B1 | passive | Base of the NPN transistor Q1 (BC847B type), with device limits of VEBO 6 V and collector current IC 100 mA maximum. |
| 3 | C2 | passive | Collector of the PNP transistor Q2 (BC857B type), with absolute maximum VCBO -50 V, VCEO -45 V and IC -100 mA. |
| 4 | E2 | passive | Emitter of the PNP transistor Q2 (BC857B type), with absolute maximum emitter-base voltage VEBO -6 V and peak emitter current IEM -200 mA. |
| 5 | B2 | passive | Base of the PNP transistor Q2 (BC857B type), with device limits of VEBO -6 V and collector current IC -100 mA. |
| 6 | C1 | passive | Collector of the NPN transistor Q1 (BC847B type), with absolute maximum VCBO 50 V, VCEO 45 V and IC 100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage (NPN, BC847B Q1) | BVCBO | 50 | V | IC = 100µA | 3 | ||
| Collector-Emitter Breakdown Voltage (NPN, BC847B Q1) | BVCEO | 45 | V | IC = 10mA | 3 | ||
| Emitter-Base Breakdown Voltage (NPN, BC847B Q1) | BVEBO | 6 | V | IE = 100µA | 3 | ||
| DC Current Gain (NPN, BC847B Q1) | hFE | 200 | 290 | 450 | VCE = 5V, IC = 2mA | 3 | |
| Collector-Emitter Saturation Voltage (NPN, BC847B Q1) | VCE(sat) | 90 | 250 | mV | IC = 10mA, IB = 0.5mA | 3 | |
| Collector-Emitter Saturation Voltage (NPN, BC847B Q1) | VCE(sat) | 200 | 600 | mV | IC = 100mA, IB = 5mA | 3 | |
| Base-Emitter Voltage (NPN, BC847B Q1) | VBE(on) | 580 | 660 | 700 | mV | VCE = 5V, IC = 2mA | 3 |
| Base-Emitter Voltage (NPN, BC847B Q1) | VBE(on) | 770 | mV | VCE = 5V, IC = 10mA | 3 | ||
| Collector-Cutoff Current (NPN, BC847B Q1) | ICBO | 15 | nA | VCB = 30V | 3 | ||
| Collector-Cutoff Current (NPN, BC847B Q1) | ICBO | 5 | µA | VCB = 30V, TA = +150°C | 3 | ||
| Gain Bandwidth Product (NPN, BC847B Q1) | fT | 100 | 300 | MHz | VCE = 5V, IC = 10mA, f = 100MHz | 3 | |
| Collector-Base Capacitance (NPN, BC847B Q1) | Ccbo | 3.5 | 6 | pF | VCB = 10V, f = 1MHz | 3 | |
| Noise Figure (NPN, BC847B Q1) | NF | 2 | 10 | dB | VCE = 5V, IC = 200µA, Rg = 2kΩ, f = 1kHz, f = 200Hz | 3 | |
| Collector-Base Breakdown Voltage (PNP, BC857B Q2) | BVCBO | -50 | V | IC = -100µA | 4 | ||
| Collector-Emitter Breakdown Voltage (PNP, BC857B Q2) | BVCEO | -45 | V | IC = -10mA | 4 | ||
| Emitter-Base Breakdown Voltage (PNP, BC857B Q2) | BVEBO | -6 | V | IE = -100µA | 4 | ||
| DC Current Gain (PNP, BC857B Q2) | hFE | 220 | 290 | 475 | VCE = -5V, IC = -2mA | 4 | |
| Collector-Emitter Saturation Voltage (PNP, BC857B Q2) | VCE(sat) | -75 | -300 | mV | IC = -10mA, IB = -0.5mA | 4 | |
| Collector-Emitter Saturation Voltage (PNP, BC857B Q2) | VCE(sat) | -250 | -650 | mV | IC = -100mA, IB = -5mA | 4 | |
| Base-Emitter Saturation Voltage (PNP, BC857B Q2) | VBE(sat) | -850 | -950 | mV | IC = -100mA, IB = -5mA | 4 | |
| Base-Emitter Voltage (PNP, BC857B Q2) | VBE(on) | -600 | -650 | -750 | mV | VCE = -5V, IC = -2mA | 4 |
| Base-Emitter Voltage (PNP, BC857B Q2) | VBE(on) | -820 | mV | VCE = -5V, IC = -10mA | 4 | ||
| Collector-Cutoff Current (PNP, BC857B Q2) | ICBO | -15 | nA | VCB = -30V | 4 | ||
| Collector-Cutoff Current (PNP, BC857B Q2) | ICBO | -4 | µA | VCB = -30V, TA = +150°C | 4 | ||
| Gain Bandwidth Product (PNP, BC857B Q2) | fT | 100 | 200 | MHz | VCE = -5V, IC = -10mA, f = 100MHz | 4 | |
| Collector-Base Capacitance (PNP, BC857B Q2) | Ccbo | 3 | 4.5 | pF | VCB = -10V, f = 1MHz | 4 | |
| Noise Figure (PNP, BC857B Q2) | NF | 10 | dB | VCE = -5V, IC = -200µA, Rg = 2kΩ, f = 1kHz, f = 200Hz | 4 | ||
| Collector-Base Voltage (NPN, BC847B Q1) absolute maximum | VCBO | 50 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage (NPN, BC847B Q1) absolute maximum | VCEO | 45 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage (NPN, BC847B Q1) absolute maximum | VEBO | 6 | V | TA = +25°C | 2 | ||
| Collector Current (NPN, BC847B Q1) absolute maximum | IC | 100 | mA | TA = +25°C | 2 | ||
| Peak Collector Current (NPN, BC847B Q1) absolute maximum | ICM | 200 | mA | TA = +25°C | 2 | ||
| Peak Emitter Current (NPN, BC847B Q1) absolute maximum | IEM | 200 | mA | TA = +25°C | 2 | ||
| Collector-Base Voltage (PNP, BC857B Q2) absolute maximum | VCBO | -50 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage (PNP, BC857B Q2) absolute maximum | VCEO | -45 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage (PNP, BC857B Q2) absolute maximum | VEBO | -6 | V | TA = +25°C | 2 | ||
| Collector Current (PNP, BC857B Q2) absolute maximum | IC | -100 | mA | TA = +25°C | 2 | ||
| Peak Collector Current (PNP, BC857B Q2) absolute maximum | ICM | -200 | mA | TA = +25°C | 2 | ||
| Peak Emitter Current (PNP, BC857B Q2) absolute maximum | IEM | -200 | mA | TA = +25°C | 2 | ||
| Power Dissipation, Total Device | PD | 200 | mW | Total device, TA = +25°C (Note 6) | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 625 | °C/W | Minimum recommended pad layout, 1oz copper, single-sided 1.6mm FR-4, still air, steady state (Note 5) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -65 | 150 | °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
BC847PNQ-7R-F - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
bc847pnq-7r-f-etched.step/bc847pnq-7r-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc847pnq-7r-f.step/bc847pnq-7r-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
8d52299dad810618, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).