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BC847PNQ-7-F

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Diodes Incorporated Bipolar Transistors - BJT, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

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BC847PNQ-7-F

Diodes Incorporated · Bipolar Transistors - BJT · SOT-363

BC847PNQ-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of NPN transistor Q1 (BC847B type), with VEBO 6 V max and IC 100 mA max.
2 B1 passive Base of NPN transistor Q1 (BC847B type), internally isolated from Q2.
3 C2 passive Collector of PNP transistor Q2 (BC857B type), with VCEO -45 V max and IC -100 mA max.
4 E2 passive Emitter of PNP transistor Q2 (BC857B type), with VEBO -6 V max.
5 B2 passive Base of PNP transistor Q2 (BC857B type), internally isolated from Q1.
6 C1 passive Collector of NPN transistor Q1 (BC847B type), with VCEO 45 V max and IC 100 mA max.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Q1 Collector-Base Voltage VCBO 50 V NPN, TA=+25°C 2
Q1 Collector-Emitter Voltage VCEO 45 V NPN, TA=+25°C 2
Q1 Emitter-Base Voltage VEBO 6 V NPN, TA=+25°C 2
Q1 Collector Current IC 100 mA NPN, TA=+25°C 2
Q1 Peak Collector Current ICM 200 mA NPN, TA=+25°C 2
Q1 Peak Emitter Current IEM 200 mA NPN, TA=+25°C 2
Q2 Collector-Base Voltage VCBO -50 V PNP, TA=+25°C 2
Q2 Collector-Emitter Voltage VCEO -45 V PNP, TA=+25°C 2
Q2 Emitter-Base Voltage VEBO -6 V PNP, TA=+25°C 2
Q2 Collector Current IC -100 mA PNP, TA=+25°C 2
Q2 Peak Collector Current ICM -200 mA PNP, TA=+25°C 2
Q2 Peak Emitter Current IEM -200 mA PNP, TA=+25°C 2
Power Dissipation, Total Device PD 200 mW TA=+25°C 2
Thermal Resistance, Junction to Ambient RθJA 625 °C/W Minimum recommended pad, 1oz copper, single-sided 1.6mm FR-4, still air 2
Operating and Storage Temperature Range TJ, TSTG -65 150 °C 2
Q1 Collector-Base Breakdown Voltage BVCBO 50 V IC = 100µA 3
Q1 Collector-Emitter Breakdown Voltage BVCEO 45 V IC = 10mA 3
Q1 Emitter-Base Breakdown Voltage BVEBO 6 V IE = 100µA 3
Q1 DC Current Gain hFE 200 290 450 VCE = 5V, IC = 2mA 3
Q1 Collector-Emitter Saturation Voltage VCE(sat) 90 250 mV IC = 10mA, IB = 0.5mA 3
Q1 Collector-Emitter Saturation Voltage VCE(sat) 200 600 mV IC = 100mA, IB = 5mA 3
Q1 Base-Emitter Saturation Voltage VBE(sat) 700 mV IC = 10mA, IB = 0.5mA 3
Q1 Base-Emitter Saturation Voltage VBE(sat) 900 mV IC = 100mA, IB = 5mA 3
Q1 Base-Emitter Voltage VBE(on) 580 660 700 mV VCE = 5V, IC = 2mA 3
Q1 Base-Emitter Voltage VBE(on) 770 mV VCE = 5V, IC = 10mA 3
Q1 Collector-Cutoff Current ICBO 15 nA VCB = 30V 3
Q1 Collector-Cutoff Current ICBO 5 µA VCB = 30V, TA = +150°C 3
Q1 Gain Bandwidth Product fT 100 300 MHz VCE = 5V, IC = 10mA, f = 100MHz 3
Q1 Collector-Base Capacitance Ccbo 3.5 6 pF VCB = 10V, f = 1MHz 3
Q1 Noise Figure NF 2 10 dB VCE = 5V, IC = 200µA, Rg = 2kΩ, f = 1kHz, f = 200Hz 3
Q2 Collector-Base Breakdown Voltage BVCBO -50 V IC = -100µA 4
Q2 Collector-Emitter Breakdown Voltage BVCEO -45 V IC = -10mA 4
Q2 Emitter-Base Breakdown Voltage BVEBO -6 V IE = -100µA 4
Q2 DC Current Gain hFE 220 290 475 VCE = -5V, IC = -2mA 4
Q2 Collector-Emitter Saturation Voltage VCE(sat) -75 -250 mV IC = -10mA, IB = -0.5mA 4
Q2 Collector-Emitter Saturation Voltage VCE(sat) -300 -650 mV IC = -100mA, IB = -5mA 4
Q2 Base-Emitter Saturation Voltage VBE(sat) -700 mV IC = -10mA, IB = -0.5mA 4
Q2 Base-Emitter Saturation Voltage VBE(sat) -850 -950 mV IC = -100mA, IB = -5mA 4
Q2 Base-Emitter Voltage VBE(on) -600 -650 -750 mV VCE = -5V, IC = -2mA 4
Q2 Base-Emitter Voltage VBE(on) -820 mV VCE = -5V, IC = -10mA 4
Q2 Collector-Cutoff Current ICBO -15 nA VCB = -30V 4
Q2 Collector-Cutoff Current ICBO -4 µA VCB = -30V, TA = +150°C 4
Q2 Gain Bandwidth Product fT 100 200 MHz VCE = -5V, IC = -10mA, f = 100MHz 4
Q2 Collector-Base Capacitance Ccbo 3 4.5 pF VCB = -10V, f = 1MHz 4
Q2 Noise Figure NF 10 dB VCE = -5V, IC = -200µA, Rg = 2kΩ, f = 1kHz, f = 200Hz 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: BC847PNQ-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc847pnq-7-f-etched.step / bc847pnq-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847pnq-7-f.step / bc847pnq-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 8d52299dad810618, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF