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BC847CDW1T1G
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onsemi Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BC847CDW1T1G
onsemi · Bipolar (BJT) · SOT-363
BC847CDW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER 2 | passive | Emitter of the second NPN transistor (Q2) in the dual device, per the Style 1 pin assignment. |
| 2 | BASE 2 | passive | Base of the second NPN transistor (Q2) in the dual device, per the Style 1 pin assignment. |
| 3 | COLLECTOR 1 | passive | Collector of the first NPN transistor (Q1) in the dual device, per the Style 1 pin assignment. |
| 4 | EMITTER 1 | passive | Emitter of the first NPN transistor (Q1) in the dual device, per the Style 1 pin assignment. |
| 5 | BASE 1 | passive | Base of the first NPN transistor (Q1) in the dual device, per the Style 1 pin assignment. |
| 6 | COLLECTOR 2 | passive | Collector of the second NPN transistor (Q2) in the dual device, per the Style 1 pin assignment. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (BC847B grade) | hFE | 200 | 290 | 450 | IC = 2.0 mA, VCE = 5.0 V | 2 | |
| Collector-Emitter Breakdown Voltage (BC847) | V(BR)CEO | 45 | V | IC = 10 mA | 2 | ||
| Collector-Emitter Breakdown Voltage (BC847) | V(BR)CES | 50 | V | IC = 10 µA, VEB = 0 | 2 | ||
| Collector-Base Breakdown Voltage (BC847) | V(BR)CBO | 50 | V | IC = 10 µA | 2 | ||
| Emitter-Base Breakdown Voltage (BC847) | V(BR)EBO | 6 | V | IE = 1.0 µA | 2 | ||
| Current-Gain - Bandwidth Product | fT | 100 | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 2 | ||
| Base-Emitter Voltage (low-current point) | VBE(on) | 580 | 660 | mV | IC = 2.0 mA, VCE = 5.0 V | 2 | |
| Base-Emitter Voltage (high-current point) | VBE(on) | 700 | 770 | mV | IC = 10 mA, VCE = 5.0 V | 2 | |
| Collector Cutoff Current | ICBO | 15 | nA | VCB = 30 V | 2 | ||
| Collector Cutoff Current | ICBO | 5 | µA | VCB = 30 V, TA = 150°C | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.7 | V | IC = 10 mA, IB = 0.5 mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.9 | V | IC = 100 mA, IB = 5.0 mA | 2 | ||
| Output Capacitance | Cobo | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 2 | ||
| Noise Figure | NF | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz | 2 | ||
| Collector-Emitter Voltage | VCEO | 45 | V | BC847 column | 1 | ||
| Collector-Base Voltage | VCBO | 50 | V | BC847 column | 1 | ||
| Emitter-Base Voltage | VEBO | 6 | V | BC847 column | 1 | ||
| Collector Current - Continuous | IC | 100 | mAdc | 1 | |||
| Total Device Dissipation Per Device, FR-5 Board | PD | 250 | mW | FR-5 board (Note 1), TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 328 | °C/W | 1 | |||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
BC847CDW1T1G - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
bc847cdw1t1g-etched.step/bc847cdw1t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc847cdw1t1g.step/bc847cdw1t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (13 pp, sha256
62a994ffa45085e6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC847CDW1T1G
**onsemi** · Bipolar (BJT) · SOT-363
BC847CDW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER 2 | passive | Emitter of the second NPN transistor (Q2) in the dual device, per the Style 1 pin assignment. |
| 2 | BASE 2 | passive | Base of the second NPN transistor (Q2) in the dual device, per the Style 1 pin assignment. |
| 3 | COLLECTOR 1 | passive | Collector of the first NPN transistor (Q1) in the dual device, per the Style 1 pin assignment. |
| 4 | EMITTER 1 | passive | Emitter of the first NPN transistor (Q1) in the dual device, per the Style 1 pin assignment. |
| 5 | BASE 1 | passive | Base of the first NPN transistor (Q1) in the dual device, per the Style 1 pin assignment. |
| 6 | COLLECTOR 2 | passive | Collector of the second NPN transistor (Q2) in the dual device, per the Style 1 pin assignment. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (BC847B grade) | hFE | 200 | 290 | 450 | | IC = 2.0 mA, VCE = 5.0 V | 2 |
| Collector-Emitter Breakdown Voltage (BC847) | V(BR)CEO | 45 | | | V | IC = 10 mA | 2 |
| Collector-Emitter Breakdown Voltage (BC847) | V(BR)CES | 50 | | | V | IC = 10 µA, VEB = 0 | 2 |
| Collector-Base Breakdown Voltage (BC847) | V(BR)CBO | 50 | | | V | IC = 10 µA | 2 |
| Emitter-Base Breakdown Voltage (BC847) | V(BR)EBO | 6 | | | V | IE = 1.0 µA | 2 |
| Current-Gain - Bandwidth Product | fT | 100 | | | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 2 |
| Base-Emitter Voltage (low-current point) | VBE(on) | 580 | | 660 | mV | IC = 2.0 mA, VCE = 5.0 V | 2 |
| Base-Emitter Voltage (high-current point) | VBE(on) | 700 | | 770 | mV | IC = 10 mA, VCE = 5.0 V | 2 |
| Collector Cutoff Current | ICBO | | | 15 | nA | VCB = 30 V | 2 |
| Collector Cutoff Current | ICBO | | | 5 | µA | VCB = 30 V, TA = 150°C | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | 0.7 | V | IC = 10 mA, IB = 0.5 mA | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | 0.9 | V | IC = 100 mA, IB = 5.0 mA | 2 |
| Output Capacitance | Cobo | | | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 2 |
| Noise Figure | NF | | | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz | 2 |
| Collector-Emitter Voltage | VCEO | | | 45 | V | BC847 column | 1 |
| Collector-Base Voltage | VCBO | | | 50 | V | BC847 column | 1 |
| Emitter-Base Voltage | VEBO | | | 6 | V | BC847 column | 1 |
| Collector Current - Continuous | IC | | | 100 | mAdc | | 1 |
| Total Device Dissipation Per Device, FR-5 Board | PD | | | 250 | mW | FR-5 board (Note 1), TA = 25°C | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 328 | °C/W | | 1 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `BC847CDW1T1G`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `bc847cdw1t1g-etched.step` / `bc847cdw1t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc847cdw1t1g.step` / `bc847cdw1t1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918223609323520) (13 pp, sha256 `62a994ffa45085e6`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc847cdw1t1g-datasheet.pdf)