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Ray bc847bw: specified limits as data (metadata.characteristics, 25 rows from the datasheet) 29343ff

BC847BW

Nexperia · Bipolar (BJT) · SOT-323

BC847BW from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal; control input for NPN transistor; maximum emitter-base voltage (VEBO) of 6 V.
2 E output Emitter terminal; current return path in NPN transistor configuration.
3 C output Collector terminal; rated for 100 mA maximum collector current and 45 V maximum collector-emitter voltage (VCEO) with open base.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCEO 45 V open base 3
Collector-base voltage VCBO 50 V open emitter 3
Emitter-base voltage VEBO 6 V open collector 3
Collector current IC 100 mA 3
Peak collector current ICM 200 mA single pulse; tp ≤ 1 ms 3
Peak base current IBM 100 mA single pulse; tp ≤ 1 ms 3
Total power dissipation Ptot 200 mW Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint [1] 3
Junction temperature Tj 150 °C 3
Ambient temperature Tamb -65 150 °C 3
Storage temperature Tstg -65 150 °C 3
Thermal resistance from junction to ambient Rth(j-a) 625 K/W in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint 3
Collector-base breakdown voltage V(BR)CBO 50 V IC = 100 µA; IE = 0 A 4
Collector-emitter breakdown voltage V(BR)CES 45 V IC = 2 mA; VBE = 0 A 4
Emitter-base breakdown voltage V(BR)EBO 6 V IC = 0 A; IE = 100 µA 4
Collector-base cut-off current ICBO 15 nA VCB = 30 V; IE = 0 A 4
Collector-base cut-off current at high temperature ICBO 5 μA VCB = 30 V; IE = 0 A; Tj = 150 °C 4
Emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A 4
DC current gain hFE 200 290 450 VCE = 5 V; IC = 2 mA 4
Collector-emitter saturation voltage VCEsat 90 200 mV IC = 10 mA; IB = 0.5 mA 4
Collector-emitter saturation voltage VCEsat 200 400 mV IC = 100 mA; IB = 5 mA; pulsed tp ≤ 300 µs, δ ≤ 0.02 4
Base-emitter voltage VBE 580 660 700 mV VCE = 5 V; IC = 2 mA 4
Base-emitter voltage VBE 770 mV VCE = 5 V; IC = 10 mA 4
Transition frequency fT 100 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz 4
Collector capacitance Cc 1.5 pF VCB = 10 V; IE = ie = 0 A; f = 1 MHz 4
Noise figure NF 2 10 dB IC = 200 μA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 4

CAD (KiCad official)

  • Symbol: BC847BW
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc847bw-etched.step / bc847bw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847bw.step / bc847bw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (12 pp, sha256 4aa62e1c1c457343, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF