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Contents

README

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BC847BW-7-F

Diodes Incorporated · Bipolar (BJT) · SOT-323

BC847BW-7-F from Diodes Incorporated, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor, shown at the bottom-left of the top-view pin-out.
2 E passive Emitter of the NPN transistor, shown at the bottom-right of the top-view pin-out.
3 C passive Collector of the NPN transistor, the single pin on the opposite side of the body in the top-view pin-out.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage (BC847AW/BW/CW) VCBO 50 V 2
Collector-Emitter Voltage (BC847AW/BW/CW) VCEO 45 V 2
Emitter-Base Voltage (BC847AW/BW/CW) VEBO 6 V 2
Continuous Collector Current IC 100 mA 2
Peak Collector Current ICM 200 mA 2
Peak Base Current IBM 200 mA 2
Power Dissipation PD 200 mW Note 5: min recommended pad layout, 1oz Cu single-sided FR4, still air 2
Operating and Storage Temperature Range TJ, TSTG -65 150 °C 2
Thermal Resistance, Junction to Ambient RθJA 625 °C/W Note 5: min recommended pad layout, 1oz Cu single-sided FR4, still air 2
Thermal Resistance, Junction to Case RθJC 115 °C/W Note 5: min recommended pad layout, 1oz Cu single-sided FR4, still air 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
Electrostatic Discharge - Charged Device Model ESD CDM 1000 V JEDEC Class C3 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C 2
Collector-Base Breakdown Voltage (BC847AW/BW/CW) BVCBO 50 V IC = 100µA 3
Collector-Emitter Breakdown Voltage (BC847AW/BW/CW) BVCEO 45 V IC = 10mA (Note 7) 3
Emitter-Base Breakdown Voltage (BC847AW/BW/CW) BVEBO 6 V IE = 100µA 3
DC Current Gain (Current Gain Group BC846BW/BC847BW/BC848BW) hFE 200 290 450 VCE = 5.0V, IC = 2.0mA 3
Collector Cutoff Current ICBO 20 nA VCB = 30V 3
Collector Cutoff Current ICBO 5 µA VCB = 30V, TA = +150°C 3
Collector-Emitter Saturation Voltage VCE(sat) 90 250 mV IC = 10mA, IB = 0.5mA 3
Collector-Emitter Saturation Voltage VCE(sat) 200 600 mV IC = 100mA, IB = 5.0mA 3
Base-Emitter Turn-on Voltage VBE(on) 580 660 700 mV IC = 2mA, VCE = 5V 3
Base-Emitter Turn-on Voltage VBE(on) 770 mV IC = 10mA, VCE = 5V 3
Base-Emitter Saturation Voltage VBE(sat) 700 mV IC = 10mA, IB = 0.5mA 3
Base-Emitter Saturation Voltage VBE(sat) 900 mV IC = 100mA, IB = 5mA 3
Output Capacitance Cobo 3 4.5 pF VCB = 10V, f = 1.0MHz 3
Transition Frequency fT 100 300 MHz VCE = 5V, IC = 10mA, f = 100MHz 3
Noise Figure NF 10 dB VCE = 5V, IC = 200µA, RS = 2kΩ, f = 1kHz, Δf = 200Hz 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: BC847BW-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc847bw-7-f-etched.step / bc847bw-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847bw-7-f.step / bc847bw-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 fc955f18215758e0, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF