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BC847BVN-7

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Diodes Incorporated Bipolar Transistors - BJT, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC847BVN-7

Diodes Incorporated · Bipolar Transistors - BJT · SOT-563

BC847BVN-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of NPN transistor Q1 (BC847B type), rated VEBO 6 V and IC 100 mA.
2 B1 passive Base of NPN transistor Q1 (BC847B type), with collector-base voltage rating VCBO 50 V.
3 C2 passive Collector of PNP transistor Q2 (BC857B type), rated VCEO -45 V and IC -100 mA.
4 E2 passive Emitter of PNP transistor Q2 (BC857B type), rated VEBO -6 V.
5 B2 passive Base of PNP transistor Q2 (BC857B type), with collector-base voltage rating VCBO -50 V.
6 C1 passive Collector of NPN transistor Q1 (BC847B type), rated VCEO 45 V and IC 100 mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-563
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Q1 NPN Collector-Base Breakdown Voltage BVCBO 50 V IC = 100µA, IB = 0 3
Q1 NPN Collector-Emitter Breakdown Voltage BVCEO 45 V IC = 10mA, IB = 0 3
Q1 NPN Emitter-Base Breakdown Voltage BVEBO 6 V IE = 100µA, IC = 0 3
Q1 NPN DC Current Gain hFE 200 290 450 VCE = 5.0V, IC = 2.0mA 3
Q1 NPN Collector-Emitter Saturation Voltage VCE(sat) 90 250 mV IC = 10mA, IB = 0.5mA 3
Q1 NPN Collector-Emitter Saturation Voltage VCE(sat) 200 600 mV IC = 100mA, IB = 5.0mA 3
Q1 NPN Base-Emitter Voltage VBE(on) 580 660 700 mV VCE = 5.0V, IC = 2.0mA 3
Q1 NPN Base-Emitter Voltage VBE(on) 720 mV VCE = 5.0V, IC = 10mA 3
Q1 NPN Collector Cut Off Current ICBO 15 nA VCB = 30V 3
Q1 NPN Collector Cut Off Current ICBO 5 µA VCB = 30V, TA = +150°C 3
Q1 NPN Transition Frequency fT 100 300 MHz VCE = 5.0V, IC = 10mA, f = 100MHz 3
Q1 NPN Collector-Base Capacitance Ccbo 3.5 6 pF VCB = 10V, f = 1.0MHz 3
Q1 NPN Base-Emitter Saturation Voltage VBE(sat) 700 mV IC = 10mA, IB = 0.5mA 3
Q1 NPN Base-Emitter Saturation Voltage VBE(sat) 900 mV IC = 100mA, IB = 5.0mA 3
Q2 PNP Collector-Base Breakdown Voltage BVCBO -50 V IC = -100µA, IB = 0 4
Q2 PNP Collector-Emitter Breakdown Voltage BVCEO -45 V IC = -10mA, IB = 0 4
Q2 PNP Emitter-Base Breakdown Voltage BVEBO -6 V IE = -100µA, IC = 0 4
Q2 PNP DC Current Gain hFE 220 290 475 VCE = -5.0V, IC = -2.0mA 4
Q2 PNP Collector-Emitter Saturation Voltage VCE(sat) -75 -300 mV IC = -10mA, IB = -0.5mA 4
Q2 PNP Collector-Emitter Saturation Voltage VCE(sat) -250 -650 mV IC = -100mA, IB = -5.0mA 4
Q2 PNP Base-Emitter Voltage VBE(on) -600 -650 -750 mV VCE = -5.0V, IC = -2.0mA 4
Q2 PNP Base-Emitter Voltage VBE(on) -820 mV VCE = -5.0V, IC = -10mA 4
Q2 PNP Collector Cut Off Current ICBO -15 nA VCB = -30V 4
Q2 PNP Collector Cut Off Current ICBO -4 µA VCB = -30V, TA = +150°C 4
Q2 PNP Transition frequency fT 100 200 MHz VCE = -5.0V, IC = -10mA, f = 100MHz 4
Q2 PNP Collector-Base Capacitance Ccbo 3 4.5 pF VCB = -10V, f = 1.0MHz 4
Q2 PNP Base-Emitter Saturation Voltage VBE(sat) -700 mV IC = -10mA, IB = -0.5mA 4
Q2 PNP Base-Emitter Saturation Voltage VBE(sat) -850 -950 mV IC = -100mA, IB = -5.0mA 4
Q1 NPN Collector-Base Voltage VCBO 50 V TA = +25°C 2
Q1 NPN Collector-Emitter Voltage VCEO 45 V TA = +25°C 2
Q1 NPN Emitter-Base Voltage VEBO 6 V TA = +25°C 2
Q1 NPN Collector Current IC 100 mA TA = +25°C 2
Q1 NPN Peak Pulse Collector Current ICM 200 mA single pulse, TA = +25°C 2
Q1 NPN Peak Pulse Emitter Current IEM 200 mA single pulse, TA = +25°C 2
Q2 PNP Collector-Base Voltage VCBO -50 V TA = +25°C 2
Q2 PNP Collector-Emitter Voltage VCEO -45 V TA = +25°C 2
Q2 PNP Emitter-Base Voltage VEBO -6 V TA = +25°C 2
Q2 PNP Collector Current IC -100 mA TA = +25°C 2
Q2 PNP Peak Pulse Collector Current ICM -200 mA single pulse, TA = +25°C 2
Q2 PNP Peak Pulse Emitter Current IEM -200 mA single pulse, TA = +25°C 2
Power Dissipation, Total Device PD 150 mW TA = +25°C, min recommended pad FR-4 PCB (Note 5) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient RθJA 833 °C/W Total device, min recommended pad FR-4 PCB, still air (Note 5) 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Finish, Matte Tin Plated Leads, Solderable • per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: BC847BVN-7
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: bc847bvn-7-etched.step / bc847bvn-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847bvn-7.step / bc847bvn-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 d775e0f5242fe4a5, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF