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Ray Publish 0.1.0 c8c2e40 8d ago

BC847BV

Changjing · Bipolar (BJT) · SOT-563

BC847BV from Changjing, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (NPN); emitter-base voltage max 6 V, collector current max 0.1 A continuous per the datasheet ratings.
2 B1 input Base of transistor 1 (NPN); emitter-base voltage max 6 V, with DC current gain hFE 200 to 450 at VCE=5 V, IC=2 mA.
3 C2 passive Collector of transistor 2 (NPN); collector-emitter voltage max 45 V, collector-base voltage max 50 V, collector current max 0.1 A continuous.
4 E2 passive Emitter of transistor 2 (NPN); emitter-base voltage max 6 V, collector current max 0.1 A continuous per the datasheet ratings.
5 B2 input Base of transistor 2 (NPN); emitter-base voltage max 6 V, with DC current gain hFE 200 to 450 at VCE=5 V, IC=2 mA.
6 C1 passive Collector of transistor 1 (NPN); collector-emitter voltage max 45 V, collector-base voltage max 50 V, collector current max 0.1 A continuous.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 50 V IC=10μA,IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 45 V IC=10mA,IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE=1μA,IC=0 1
Collector cut-off current ICBO 15 nA VCB=30V,IE=0 1
Emitter cut-off current IEBO 100 nA VEB=5V,IC=0 1
DC current gain hFE(1) 200 450 VCE=5V,IC=2mA 1
Collector-emitter saturation voltage VCE(sat) 100 mV IC=10mA,IB=0.5mA 1
Collector-emitter saturation voltage VCE(sat) 300 mV IC=100mA,IB=5mA 1
Base-emitter saturation voltage VBE(sat) 700 mV IC=10mA,IB=0.5mA 1
Base-emitter saturation voltage VBE(sat) 900 mV IC=100mA,IB=5mA 1
Base-emitter voltage VBE 580 660 700 mV VCE=5V,IC=2mA 1
Base-emitter voltage VBE 770 mV VCE=5V,IC=10mA 1
Transition frequency fT 100 MHz VCE=5V,IC=10mA,f=100MHz 1
Output capacitance Cob 4.5 pF VCB=10V,IE=0,f=1MHz 1
Noise figure NF 10 dB VCE=5V,Rs=2KΩ, f=1kHz,BW=200Hz 1
Collector-base voltage VCBO 50 V 1
Collector-emitter voltage VCEO 45 V 1
Emitter-base voltage VEBO 6 V 1
Collector current -Continuous IC 0.1 A 1
Collector power dissipation PC 0.15 W 1
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Thermal resistance, junction to ambient air RθJA 833 ℃/W 1

CAD (KiCad official)

  • Symbol: BC847BV
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: bc847bv-etched.step / bc847bv-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847bv.step / bc847bv.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (3 pp, sha256 dd3a70a71cf46de8, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF