BC847BPDW1T3G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	EMITTER 2	passive	Emitter of the second transistor in the Style 1 pinout; the datasheet gives no per-pin limit, only the BC847 device ratings of VCEO 45 V and continuous IC 100 mA (NPN) or -45 V and -100 mA (PNP).
2	BASE 2	passive	Base of the second transistor in the Style 1 pinout; the datasheet gives no per-pin limit, only the device ratings listed on page 1.
3	COLLECTOR 1	passive	Collector of the first transistor in the Style 1 pinout; the datasheet gives no per-pin limit, only the device ratings listed on page 1.
4	EMITTER 1	passive	Emitter of the first transistor in the Style 1 pinout; the datasheet gives no per-pin limit, only the device ratings listed on page 1.
5	BASE 1	passive	Base of the first transistor in the Style 1 pinout; the datasheet gives no per-pin limit, only the device ratings listed on page 1.
6	COLLECTOR 2	passive	Collector of the second transistor in the Style 1 pinout; the datasheet gives no per-pin limit, only the device ratings listed on page 1.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOT-363
Category	Transistors
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-Emitter Breakdown Voltage (NPN, BC847 series)	V(BR)CEO	45			V	IC = 10 mA	2
Collector-Emitter Breakdown Voltage (NPN, BC847B)	V(BR)CES	50			V	IC = 10 µA, VEB = 0	2
Collector-Base Breakdown Voltage (NPN, BC847 series)	V(BR)CBO	50			V	IC = 10 µA	2
Emitter-Base Breakdown Voltage (NPN, BC847 series)	V(BR)EBO	6			V	IE = 1.0 µA	2
Collector Cutoff Current (NPN)	ICBO			15	nA	VCB = 30 V	2
Collector Cutoff Current (NPN, TA = 150°C)	ICBO			5	µA	VCB = 30 V, TA = 150°C	2
Collector-Emitter Saturation Voltage (NPN)	VCE(sat)			0.25	V	IC = 10 mA, IB = 0.5 mA (all devices except SBC847BPDW1T1G)	2
Collector-Emitter Saturation Voltage (NPN)	VCE(sat)			0.6	V	IC = 100 mA, IB = 5.0 mA (all devices)	2
Base-Emitter Saturation Voltage (NPN)	VBE(sat)			0.7	V	IC = 10 mA, IB = 0.5 mA	2
Base-Emitter Saturation Voltage (NPN)	VBE(sat)			0.9	V	IC = 100 mA, IB = 5.0 mA	2
Base-Emitter Voltage (NPN)	VBE(on)	580		660	mV	IC = 2.0 mA, VCE = 5.0 V	2
Base-Emitter Voltage (NPN)	VBE(on)		700	770	mV	IC = 10 mA, VCE = 5.0 V	2
Current-Gain - Bandwidth Product (NPN)	fT	100			MHz	IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz	2
Output Capacitance (NPN)	Cobo			4.5	pF	VCB = 10 V, f = 1.0 MHz	2
Noise Figure (NPN)	NF			10	dB	IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz	2
Collector-Emitter Breakdown Voltage (PNP, BC847 series)	V(BR)CEO	-45			V	IC = -10 mA	3
Collector-Emitter Breakdown Voltage (PNP, BC847 series)	V(BR)CES	-50			V	IC = -10 µA, VEB = 0	3
Collector-Base Breakdown Voltage (PNP, BC847 series)	V(BR)CBO	-50			V	IC = -10 µA	3
Emitter-Base Breakdown Voltage (PNP, BC847 series)	V(BR)EBO	-6			V	IE = -1.0 µA	3
Collector Cutoff Current (PNP)	ICBO			-15	nA	VCB = -30 V	3
Collector Cutoff Current (PNP, TA = 150°C)	ICBO			-4	µA	VCB = -30 V, TA = 150°C	3
Collector-Emitter Saturation Voltage (PNP)	VCE(sat)			-0.3	V	IC = -10 mA, IB = -0.5 mA (all devices except SBC847BPDW1T1G)	3
Collector-Emitter Saturation Voltage (PNP)	VCE(sat)			-0.65	V	IC = -100 mA, IB = -5.0 mA (all devices)	3
Base-Emitter Saturation Voltage (PNP)	VBE(sat)			-0.7	V	IC = -10 mA, IB = -0.5 mA	3
Base-Emitter Saturation Voltage (PNP)	VBE(sat)			-0.9	V	IC = -100 mA, IB = -5.0 mA	3
Base-Emitter On Voltage (PNP)	VBE(on)	-0.6			V	IC = -2.0 mA, VCE = -5.0 V	3
Base-Emitter On Voltage (PNP)	VBE(on)		-0.75	-0.82	V	IC = -10 mA, VCE = -5.0 V	3
Current-Gain - Bandwidth Product (PNP)	fT	100			MHz	IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz	3
Output Capacitance (PNP)	Cob			4.5	pF	VCB = -10 V, f = 1.0 MHz	3
Noise Figure (PNP)	NF			10	dB	IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz	3
Collector-Emitter Voltage (NPN, BC847)	VCEO			45	V	Maximum Ratings - NPN	1
Collector-Base Voltage (NPN, BC847)	VCBO			50	V	Maximum Ratings - NPN	1
Emitter-Base Voltage (NPN)	VEBO			6	V	Maximum Ratings - NPN	1
Collector Current - Continuous (NPN)	IC			100	mAdc	Maximum Ratings - NPN	1
Collector Current - Peak (NPN)	ICM			200	mAdc	Maximum Ratings - NPN	1
Collector-Emitter Voltage (PNP, BC847)	VCEO	-45			V	Maximum Ratings - PNP	1
Collector-Base Voltage (PNP, BC847)	VCBO	-50			V	Maximum Ratings - PNP	1
Emitter-Base Voltage (PNP)	VEBO	-6			V	Maximum Ratings - PNP	1
Collector Current - Continuous (PNP)	IC	-100			mAdc	Maximum Ratings - PNP	1
Collector Current - Peak (PNP)	ICM	-200			mAdc	Maximum Ratings - PNP	1
Total Device Dissipation Per Device	PD			380	mW	TA = 25°C, FR-5 Board (Note 1)	2
Thermal Resistance, Junction-to-Ambient	RθJA			328	°C/W		2
Junction and Storage Temperature	TJ, Tstg	-55		150	°C		2

CAD (KiCad official)

Symbol: BC847BPDW1T3G
Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
3D model: SOT-363 (KiCad packages3D, STEP)
3D model files: bc847bpdw1t3g-etched.step / bc847bpdw1t3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847bpdw1t3g.step / bc847bpdw1t3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (19 pp, sha256 aa5a4b5c8249a6c9, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

BC847BPDW1T3G

Verified BC847BPDW1T3G

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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