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Ray Initial commit: component/bc847bpdw1t1g b1ecc95 6d ago

BC847BPDW1T1G

onsemi · Bipolar (BJT) · SOT-363

BC847BPDW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER 2 passive Emitter of Q2 (PNP transistor); reference terminal for the complementary PNP device
2 BASE 2 passive Base of Q2 (PNP transistor); control terminal with DC current gain (hFE) typical 420 at IC=-10µA, VCE=-5V
3 COLLECTOR 1 passive Collector of Q1 (NPN transistor); maximum continuous current 100 mAdc with maximum VCEO of 45V
4 EMITTER 1 passive Emitter of Q1 (NPN transistor); reference terminal for the general-purpose NPN transistor
5 BASE 1 passive Base of Q1 (NPN transistor); control terminal with DC current gain (hFE) typical 420 at IC=10µA, VCE=5V
6 COLLECTOR 2 passive Collector of Q2 (PNP transistor); maximum continuous current 100 mAdc with maximum VCEO of -45V

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-363
Category Transistors/Thyristors
Pins 6

CAD (KiCad official)

  • Symbol: BC847BPDW1T1G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc847bpdw1t1g-etched.step / bc847bpdw1t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc847bpdw1t1g.step / bc847bpdw1t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (17 pp, sha256 a75702cbefce76b9, retrieved 2026-09-29, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF