# BC846PN

**MSKSEMI** · Bipolar (BJT) · SOT-363

BC846PN from MSKSEMI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of TR1 (NPN, BC846W die); VEBO 6 V max, IC 0.1 A continuous. |
| 2 | B1 | input | Base of TR1 (NPN); hFE 200-450 at VCE=5V, IC=2mA, VBE(on) 0.58-0.7 V. |
| 3 | C2 | passive | Collector of TR2 (PNP, BC856W die); VCEO -65 V, VCBO -80 V, IC -0.1 A continuous. |
| 4 | E2 | passive | Emitter of TR2 (PNP); VEBO -5 V max. |
| 5 | B2 | input | Base of TR2 (PNP); hFE 220-475 at VCE=-5V, IC=-2mA, VBE(on) -0.6 to -0.75 V. |
| 6 | C1 | passive | Collector of TR1 (NPN); VCEO 65 V, VCBO 80 V, IC 0.1 A continuous. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage (NPN TR1) | V(BR)CBO | 80 |  |  | V | IC=10μA,IE=0 | 2 |
| Collector-emitter breakdown voltage (NPN TR1) | V(BR)CEO | 65 |  |  | V | IC=10mA,IB=0 | 2 |
| Emitter-base breakdown voltage (NPN TR1) | V(BR)EBO | 6 |  |  | V | IE=1μA,IC=0 | 2 |
| Collector cut-off current (NPN TR1) | ICBO |  |  | 15 | nA | VCB=30V,IE=0 | 2 |
| Emitter cut-off current (NPN TR1) | IEBO |  |  | 15 | nA | VEB=5V,IC=0 | 2 |
| DC current gain (NPN TR1) | hFE | 200 |  | 450 |  | VCE=5V,IC=2mA | 2 |
| Collector-emitter saturation voltage (NPN TR1) | VCE(sat) |  |  | 0.25 | V | IC=10mA,IB=0.5mA | 2 |
| Collector-emitter saturation voltage (NPN TR1) | VCE(sat) |  |  | 0.6 | V | IC=100mA,IB=5mA | 2 |
| Base-emitter saturation voltage (NPN TR1) | VBE(sat) |  |  | 0.7 | V | IC=10mA,IB=0.5mA | 2 |
| Base-emitter saturation voltage (NPN TR1) | VBE(sat) |  |  | 0.9 | V | IC=100mA,IB=5mA | 2 |
| Base-emitter voltage (NPN TR1) | VBE(on) | 0.58 |  | 0.7 | V | VCE=5V,IC=2mA | 2 |
| Base-emitter voltage (NPN TR1) | VBE(on) |  |  | 0.72 | V | VCE=5V,IC=10mA | 2 |
| Collector output capacitance (NPN TR1) | Cob |  |  | 6 | pF | VCB=10V,IE=0,f=1MHz | 2 |
| Transition frequency (NPN TR1) | fT | 100 |  |  | MHz | VCE=5V,IC=10mA,f=100MHz | 2 |
| Noise figure (NPN TR1) | NF |  |  | 10 | dB | VCE=5V,Ic=0.2mA,f=1kHz,Rg=2KΩ,∆f=200Hz | 2 |
| Collector-base breakdown voltage (PNP TR2) | V(BR)CBO | -80 |  |  | V | IC=-10μA,IE=0 | 3 |
| Collector-emitter breakdown voltage (PNP TR2) | V(BR)CEO | -65 |  |  | V | IC=-10mA,IB=0 | 3 |
| Emitter-base breakdown voltage (PNP TR2) | V(BR)EBO | -5 |  |  | V | IE=-1μA,IC=0 | 3 |
| Collector cut-off current (PNP TR2) | ICBO |  |  | -15 | nA | VCB=-30V,IE=0 | 3 |
| Emitter cut-off current (PNP TR2) | IEBO |  |  | -15 | nA | VEB=-5V,IC=0 | 3 |
| DC current gain (PNP TR2) | hFE1 | 220 |  | 475 |  | VCE=-5V,IC=-2mA | 3 |
| Collector-emitter saturation voltage (PNP TR2) | VCE(sat) |  |  | -0.3 | V | IC=-10mA,IB=-0.5mA | 3 |
| Collector-emitter saturation voltage (PNP TR2) | VCE(sat) |  |  | -0.65 | V | IC=-100mA,IB=-5mA | 3 |
| Base-emitter saturation voltage (PNP TR2) | VBE(sat) |  |  | -0.7 | V | IC=-10mA,IB=-0.5mA | 3 |
| Base-emitter saturation voltage (PNP TR2) | VBE(sat) |  |  | -0.95 | V | IC=-100mA,IB=-5mA | 3 |
| Base-emitter voltage (PNP TR2) | VBE(on) | -0.75 |  | -0.6 | V | VCE=-5V,IC=-2mA | 3 |
| Base-emitter voltage (PNP TR2) | VBE(on) |  |  | -0.82 | V | VCE=-5V,IC=-10mA | 3 |
| Collector output capacitance (PNP TR2) | Cob |  |  | 4.5 | pF | VCB=-10V,IE=0,f=1MHz | 3 |
| Transition frequency (PNP TR2) | fT | 100 |  |  | MHz | VCE=-5V,IC=-10mA,f=100MHz | 3 |
| Noise figure (PNP TR2) | NF |  |  | 10 | dB | VCE=-5V,Ic=-0.2mA,f=1kHz,Rg=2KΩ,∆f=200Hz | 3 |
| Collector-base voltage (TR1 NPN) | VCBO |  |  | 80 | V |  | 2 |
| Collector-emitter voltage (TR1 NPN) | VCEO |  |  | 65 | V |  | 2 |
| Emitter-base voltage (TR1 NPN) | VEBO |  |  | 6 | V |  | 2 |
| Collector current continuous (TR1 NPN) | IC |  |  | 0.1 | A |  | 2 |
| Collector power dissipation (TR1 NPN) | PC |  |  | 200 | mW |  | 2 |
| Junction temperature (TR1 NPN) | TJ |  |  | 150 | ℃ |  | 2 |
| Storage temperature (TR1 NPN) | Tstg | -55 |  | 150 | ℃ |  | 2 |
| Collector-base voltage (TR2 PNP) | VCBO | -80 |  |  | V |  | 3 |
| Collector-emitter voltage (TR2 PNP) | VCEO | -65 |  |  | V |  | 3 |
| Emitter-base voltage (TR2 PNP) | VEBO | -5 |  |  | V |  | 3 |
| Collector current continuous (TR2 PNP) | IC | -0.1 |  |  | A |  | 3 |
| Collector power dissipation (TR2 PNP) | PC |  |  | 200 | mW |  | 3 |
| Junction temperature (TR2 PNP) | TJ |  |  | 150 | ℃ |  | 3 |
| Storage temperature (TR2 PNP) | Tstg | -55 |  | 150 | ℃ |  | 3 |

## CAD (KiCad official)

- Symbol: `BC846PN`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `bc846pn-etched.step` / `bc846pn-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc846pn.step` / `bc846pn.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590454197968797696) (5 pp, sha256 `6aeca9760de6bfd2`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bc846pn-datasheet.pdf)