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Ray Publish 0.1.0 90424fa 1d ago

BC846BW

Guangdong Hottech · Bipolar (BJT) · SOT-323

BC846BW from Guangdong Hottech, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor, shown at the bottom-left of the SOT-323 diagram; VEBO is 6 V max and VBE(ON) is 0.58-0.7 V at VCE=5V, IC=2mA.
2 E passive Emitter of the NPN transistor, shown at the bottom-right of the SOT-323 diagram; IC is 100 mA max and VEBO is 6 V max.
3 C passive Collector of the NPN transistor, the single lead on top of the SOT-323 diagram; VCBO is 80 V, VCEO is 65 V and IC is 100 mA max.

Key specifications

Parameter Value
Manufacturer Guangdong Hottech
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 80 V IC=10uA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 65 V IC=10mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE=1uA, IC=0 1
Collector cut-off current ICBO 15 nA VCB=30V, IE=0 1
DC current gain hFE 90 VCE=5V, IC=10uA 1
DC current gain hFE 110 450 VCE=5V, IC=2mA 1
DC current gain, rank BC846BW hFE 200 450 1
Collector-emitter saturation voltage VCE(sat) 0.25 V IC=10mA, IB=0.5mA 1
Collector-emitter saturation voltage VCE(sat) 0.6 V IC=100mA, IB=5mA 1
Base-emitter saturation voltage VBE(sat) 0.7 V IC=10mA, IB=0.5mA 1
Base-emitter saturation voltage VBE(sat) 0.9 V IC=100mA, IB=5mA 1
Base-emitter voltage VBE(ON) 0.58 0.66 0.7 V VCE=5V, IC=2mA 1
Base-emitter voltage VBE(ON) 0.77 V VCE=5V, IC=10mA 1
Transition frequency fT 100 MHz VCE=5V, IC=10mA, f=100MHz 1
Collector output capacitance Cob 8 pF VCB=10V, f=1MHz 1
Noise figure NF 10 dB VCE=5V, IC=0.2mA, RS=2kΩ, f=1KMHz, BW=200Hz 1
Collector-base voltage VCBO 80 V TA = 25°C 1
Collector-emitter voltage VCEO 65 V TA = 25°C 1
Emitter-base voltage VEBO 6 V TA = 25°C 1
Collector current IC 100 mA TA = 25°C 1
Collector power dissipation PC 150 mW TA = 25°C 1
Junction temperature TJ 150 °C 1
Storage temperature TSTG -55 150 °C 1
Thermal resistance, junction to ambient RθJA 833 °C/W 1

CAD (KiCad official)

  • Symbol: BC846BW
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc846bw-etched.step / bc846bw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc846bw.step / bc846bw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Guangdong Hottech datasheet (4 pp, sha256 1ca8300b001e5ce4, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF