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BC846ASQ-7-F

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Diodes Incorporated Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC846ASQ-7-F

Diodes Incorporated · Bipolar (BJT) · SOT-363

BC846ASQ-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1; VEBO rating is 6.0V and peak emitter current IEM is 200mA.
2 B1 input Base of transistor 1; VCE(SAT) is specified at IC = 10mA with IB = 0.5mA, and at IC = 100mA with IB = 5.0mA.
3 C2 passive Collector of transistor 2; VCEO is 65V, VCBO is 80V, IC is 100mA continuous and ICM is 200mA peak.
4 E2 passive Emitter of transistor 2; VEBO rating is 6.0V and peak emitter current IEM is 200mA.
5 B2 input Base of transistor 2; VCE(SAT) is specified at IC = 10mA with IB = 0.5mA, and at IC = 100mA with IB = 5.0mA.
6 C1 passive Collector of transistor 1; VCEO is 65V, VCBO is 80V, IC is 100mA continuous and ICM is 200mA peak.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 80 V IC = 10μA 3
Collector-Emitter Breakdown Voltage BVCEO 65 V IC = 10mA 3
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 1μA 3
DC Current Gain hFE 110 220 VCE = 5.0V, IC = 2.0mA 3
Collector-Emitter Saturation Voltage VCE(SAT) 90 250 mV IC = 10mA, IB = 0.5mA 3
Collector-Emitter Saturation Voltage VCE(SAT) 200 600 mV IC = 100mA, IB = 5.0mA 3
Base-Emitter Voltage VBE(ON) 580 660 700 mV VCE = 5.0V, IC = 2.0mA 3
Base-Emitter Voltage VBE(ON) 770 mV VCE = 5.0V, IC = 10mA 3
Collector-Cutoff Current ICES 15 nA VCE = 80V 3
Collector-Cutoff Current ICBO 5 µA VCB = 30V, TA = +150°C 3
Gain Bandwidth Product fT 100 MHz VCE = 5.0V, IC = 10mA, f = 100MHz 3
Base-Emitter Saturation Voltage VBE(SAT) 700 mV IC = 10mA, IB = 0.5mA 3
Base-Emitter Saturation Voltage VBE(SAT) 900 mV IC = 100mA, IB = 5.0mA 3
Collector-Base Capacitance CCB 2 pF VCB = 10V, f = 1.0MHz 3
Collector-Base Voltage VCBO 80 V @TA = +25°C 2
Collector-Emitter Voltage VCEO 65 V @TA = +25°C 2
Emitter-Base Voltage VEBO 6 V @TA = +25°C 2
Collector Current IC 100 mA @TA = +25°C 2
Peak Collector Current ICM 200 mA @TA = +25°C 2
Peak Emitter Current IEM 200 mA @TA = +25°C 2
Power Dissipation PD 200 mW Note 6, @TA = +25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
ESD HBM ESD HBM 4000 V JEDEC Class 3B 2
ESD MM ESD MM 400 V JEDEC Class C 2
Thermal Resistance, Junction to Ambient Air RθJA 625 °C/W Note 6, @TA = +25°C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD￾202, Method 208  Weight: 0.006 grams (Approximate) 1

CAD (KiCad official)

  • Symbol: BC846ASQ-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc846asq-7-f-etched.step / bc846asq-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc846asq-7-f.step / bc846asq-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 985f37d681d58bbb, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF