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BC818-40LT1G-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC818-40LT1G-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

BC818-40LT1G-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; Emitter-Base voltage limited to 5 V (VEBO) and collector-base breakdown 50 V.
2 E passive Emitter of the NPN transistor; collector current up to 500 mA (IC) with 300 mW collector power dissipation.
3 C passive Collector of the NPN transistor; Collector-Emitter voltage limited to 45 V (VCEO) and Collector-Base voltage 50 V (VCBO).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 50 V Ta=25°C 1
Collector-Emitter Voltage VCEO 45 V Ta=25°C 1
Emitter-Base Voltage VEBO 5 V Ta=25°C 1
Collector Current IC 500 mA Ta=25°C 1
Collector Power Dissipation PC 300 mW Ta=25°C 1
Junction Temperature Tj 150 ℃ Ta=25°C 1
Storage Temperature Tstg -55 150 ℃ Ta=25°C 1
Thermal Resistance From Junction To Ambient RΘJA 417 ℃/W 1
Collector-base breakdown voltage VCBO 50 V IC= 10μA, IE=0 2
Collector-emitter breakdown voltage VCEO 45 V IC= 10mA, IB=0 2
Emitter-base breakdown voltage VEBO 5 V IE= 1μA , IC=0 2
Collector cut-off current ICBO 0.1 μA VCB= 45 V , IE=0 2
Emitter cut-off current IEBO 0.1 μA VEB= 4V, IC=0 2
DC current gain hFE(1) hFE(1) 250 600 VCE= 1V, IC= 100mA 2
DC current gain hFE(2) hFE(2) 40 VCE= 1V, IC= 500mA 2
Collector-emitter saturation voltage VCE(sat) 0.7 V IC= 500mA, IB= 50mA 2
Base-emitter saturation voltage VBE(sat) 1.2 V IC= 500mA, IB= 50mA 2
Base-emitter voltage VBE 1.2 V VCE= 1 V, IC= 500mA 2
Collector capacitance Cob 10 pF VCB=10V ,f=1MHz 2
Transition frequency fT 100 MHz VCE= 5 V, IC= 10mA, f=100MHz 2

CAD (KiCad official)

  • Symbol: BC818-40LT1G-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc818-40lt1g-hxy-etched.step / bc818-40lt1g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc818-40lt1g-hxy.step / bc818-40lt1g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 655bfda288e71d08, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF