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Contents

README

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BC817W

Nexperia · Bipolar (BJT) · SOT-323-3

BC817W from Nexperia, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN transistor; peak base current IBM is limited to 200 mA (single pulse, tp ≤ 1 ms, Tamb = 25 °C).
2 E passive Emitter terminal of the NPN transistor; emitter-base voltage VEBO is limited to 5 V (open collector, Tamb = 25 °C).
3 C passive Collector terminal of the NPN transistor; collector current IC is limited to 500 mA and collector-emitter voltage VCEO to 45 V (open base, Tamb = 25 °C).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 50 V open emitter; Tamb = 25 °C 3
collector-emitter voltage VCEO 45 V open base; Tamb = 25 °C 3
emitter-base voltage VEBO 5 V open collector; Tamb = 25 °C 3
collector current IC 500 mA Tamb = 25 °C 3
peak collector current ICM 1 A single pulse; tp ≤ 1 ms; Tamb = 25 °C 3
peak base current IBM 200 mA single pulse; tp ≤ 1 ms; Tamb = 25 °C 3
total power dissipation Ptot 200 mW Tamb ≤ 25 °C; FR4 PCB, standard footprint (notes 1, 2) 3
total power dissipation Ptot 290 mW FR4 PCB, mounting pad for collector 1 cm2 (note 3) 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -65 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 625 K/W in free air; FR4 PCB, single-sided copper, standard footprint (note 1) 4
thermal resistance from junction to ambient Rth(j-a) 431 K/W FR4 PCB, mounting pad for collector 1 cm2 (note 3) 4
collector-base breakdown voltage V(BR)CBO 50 V IC = 100 µA; IE = 0 A; Tamb = 25 °C 5
collector-emitter breakdown voltage V(BR)CEO 45 V IC = 10 mA; IE = 0 A; Tamb = 25 °C 5
emitter-base breakdown voltage V(BR)EBO 5 V IE = 100 µA; IC = 0 A; Tamb = 25 °C 5
collector-base cut-off current ICBO 100 nA VCB = 20 V; IE = 0 A; Tamb = 25 °C 5
collector-base cut-off current ICBO 5 μA VCB = 20 V; IE = 0 A; Tj = 150 °C 5
emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 5
DC current gain (BC817W) hFE 100 600 VCE = 1 V; IC = 100 mA; Tamb = 25 °C; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
DC current gain hFE 40 VCE = 1 V; IC = 500 mA; Tamb = 25 °C; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
collector-emitter saturation voltage VCEsat 700 mV IC = 500 mA; IB = 50 mA; Tamb = 25 °C; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
base-emitter voltage VBE 1.2 V VCE = 1 V; IC = 500 mA; Tamb = 25 °C; pulsed; tp ≤ 300 μs; δ ≤ 0.02 5
transition frequency fT 100 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C 5

CAD (KiCad official)

  • Symbol: BC817W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: bc817w-etched.step / bc817w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc817w.step / bc817w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 d9aba599bcbb8819, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF