component
BC817K-40R
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Nexperia Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BC817K-40R
Nexperia · Bipolar Transistors - BJT · SOT-23
BC817K-40R from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO is limited to 5 V max and peak base current IBM to 200 mA. |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is 5 V min at IE = 100 µA. |
| 3 | C | passive | Collector of the NPN transistor; VCEO is 45 V max, IC is 500 mA max and ICM is 1 A peak (tp ≤ 1 ms). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC = 100 µA; IE = 0 A | 7 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 45 | V | IC = 10 mA; IB = 0 A | 7 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100 µA; IC = 0 A | 7 | ||
| Collector-base cut-off current | ICBO | 100 | nA | VCB = 25 V; IE = 0 A | 7 | ||
| Collector-base cut-off current | ICBO | 5 | μA | VCB = 25 V; IE = 0 A; Tj = 150 °C | 7 | ||
| Emitter-base cut-off current | IEBO | 100 | nA | VEB = 5 V; IC = 0 A | 7 | ||
| DC current gain BC817K-40 | hFE | 250 | 600 | VCE = 1 V; IC = 100 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 | ||
| DC current gain BC817K-16, -25, -40 | hFE | 40 | VCE = 1 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 | |||
| Collector-emitter saturation voltage | VCEsat | 700 | mV | IC = 500 mA; IB = 50 mA; pulsed | 7 | ||
| Base-emitter saturation voltage | VBEsat | 1.2 | V | IC = 500 mA; IB = 50 mA; pulsed | 7 | ||
| Base-emitter voltage | VBE | 1.2 | V | VCE = 1 V; IC = 500 mA; pulsed | 7 | ||
| Transition frequency | fT | 100 | MHz | VCE = 5 V; IC = 10 mA; f = 100 MHz | 7 | ||
| Collector capacitance | Cc | 3 | pF | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | 7 | ||
| Emitter capacitance BC817K-40 | Ce | 39 | pF | VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz | 7 | ||
| Collector-base voltage | VCBO | 50 | V | open emitter | 3 | ||
| Collector-emitter voltage | VCEO | 45 | V | open base | 3 | ||
| Emitter-base voltage | VEBO | 5 | V | open collector | 3 | ||
| Collector current | IC | 500 | mA | 3 | |||
| Peak collector current | ICM | 1 | A | single pulse; tp ≤ 1 ms | 3 | ||
| Peak base current | IBM | 200 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| Total power dissipation | Ptot | 350 | mW | Tamb ≤ 25 °C; FR4 PCB single-sided copper, standard footprint | 3 | ||
| Total power dissipation | Ptot | 575 | mW | Tamb ≤ 25 °C; FR4 PCB single-sided copper, collector pad 1 cm2 | 3 | ||
| Total power dissipation | Ptot | 775 | mW | Tamb ≤ 25 °C; FR4 PCB 4-layer copper, collector pad 1 cm2 | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 358 | K/W | in free air; FR4 PCB single-sided copper, standard footprint | 5 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 218 | K/W | in free air; FR4 PCB single-sided copper, collector pad 1 cm2 | 5 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 162 | K/W | in free air; FR4 PCB 4-layer copper, collector pad 1 cm2 | 5 | ||
| Thermal resistance junction to solder point | Rth(j-sp) | 60 | K/W | 5 |
CAD (KiCad official)
- Symbol:
BC817K-40R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc817k-40r-etched.step/bc817k-40r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc817k-40r.step/bc817k-40r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (24 pp, sha256
4f60405af7f3ea94, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC817K-40R
**Nexperia** · Bipolar Transistors - BJT · SOT-23
BC817K-40R from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO is limited to 5 V max and peak base current IBM to 200 mA. |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is 5 V min at IE = 100 µA. |
| 3 | C | passive | Collector of the NPN transistor; VCEO is 45 V max, IC is 500 mA max and ICM is 1 A peak (tp ≤ 1 ms). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 50 | | | V | IC = 100 µA; IE = 0 A | 7 |
| Collector-emitter breakdown voltage | V(BR)CEO | 45 | | | V | IC = 10 mA; IB = 0 A | 7 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | | | V | IE = 100 µA; IC = 0 A | 7 |
| Collector-base cut-off current | ICBO | | | 100 | nA | VCB = 25 V; IE = 0 A | 7 |
| Collector-base cut-off current | ICBO | | | 5 | μA | VCB = 25 V; IE = 0 A; Tj = 150 °C | 7 |
| Emitter-base cut-off current | IEBO | | | 100 | nA | VEB = 5 V; IC = 0 A | 7 |
| DC current gain BC817K-40 | hFE | 250 | | 600 | | VCE = 1 V; IC = 100 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 |
| DC current gain BC817K-16, -25, -40 | hFE | 40 | | | | VCE = 1 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 7 |
| Collector-emitter saturation voltage | VCEsat | | | 700 | mV | IC = 500 mA; IB = 50 mA; pulsed | 7 |
| Base-emitter saturation voltage | VBEsat | | | 1.2 | V | IC = 500 mA; IB = 50 mA; pulsed | 7 |
| Base-emitter voltage | VBE | | | 1.2 | V | VCE = 1 V; IC = 500 mA; pulsed | 7 |
| Transition frequency | fT | 100 | | | MHz | VCE = 5 V; IC = 10 mA; f = 100 MHz | 7 |
| Collector capacitance | Cc | | 3 | | pF | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | 7 |
| Emitter capacitance BC817K-40 | Ce | | 39 | | pF | VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz | 7 |
| Collector-base voltage | VCBO | | | 50 | V | open emitter | 3 |
| Collector-emitter voltage | VCEO | | | 45 | V | open base | 3 |
| Emitter-base voltage | VEBO | | | 5 | V | open collector | 3 |
| Collector current | IC | | | 500 | mA | | 3 |
| Peak collector current | ICM | | | 1 | A | single pulse; tp ≤ 1 ms | 3 |
| Peak base current | IBM | | | 200 | mA | single pulse; tp ≤ 1 ms | 3 |
| Total power dissipation | Ptot | | | 350 | mW | Tamb ≤ 25 °C; FR4 PCB single-sided copper, standard footprint | 3 |
| Total power dissipation | Ptot | | | 575 | mW | Tamb ≤ 25 °C; FR4 PCB single-sided copper, collector pad 1 cm2 | 3 |
| Total power dissipation | Ptot | | | 775 | mW | Tamb ≤ 25 °C; FR4 PCB 4-layer copper, collector pad 1 cm2 | 3 |
| Junction temperature | Tj | | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Thermal resistance junction to ambient | Rth(j-a) | | | 358 | K/W | in free air; FR4 PCB single-sided copper, standard footprint | 5 |
| Thermal resistance junction to ambient | Rth(j-a) | | | 218 | K/W | in free air; FR4 PCB single-sided copper, collector pad 1 cm2 | 5 |
| Thermal resistance junction to ambient | Rth(j-a) | | | 162 | K/W | in free air; FR4 PCB 4-layer copper, collector pad 1 cm2 | 5 |
| Thermal resistance junction to solder point | Rth(j-sp) | | | 60 | K/W | | 5 |
## CAD (KiCad official)
- Symbol: `BC817K-40R`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bc817k-40r-etched.step` / `bc817k-40r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc817k-40r.step` / `bc817k-40r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/BC817K-40R.pdf) (24 pp, sha256 `4f60405af7f3ea94`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc817k-40r-datasheet.pdf)