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Contents

README

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BC817K-25H

Nexperia · Bipolar Transistors - BJT · SOT-23

BC817K-25H from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; the datasheet gives VEBO of 7 V (open collector) and peak base current IBM of 200 mA (single pulse, tp ≤ 1 ms).
2 E passive Emitter of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is at least 7 V at IE = 100 µA.
3 C passive Collector of the NPN transistor; VCEO is 45 V (open base), IC is 500 mA continuous and ICM is 1 A peak (tp ≤ 1 ms).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 50 V IC = 100 µA; IE = 0 A 7
Collector-emitter breakdown voltage V(BR)CEO 45 V IC = 10 mA; IB = 0 A 7
Emitter-base breakdown voltage V(BR)EBO 7 V IE = 100 µA; IC = 0 A 7
Collector-base cut-off current ICBO 100 nA VCB = 25 V; IE = 0 A 7
Collector-base cut-off current ICBO 5 µA VCB = 25 V; IE = 0 A; Tj = 150 °C 7
Emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A 7
DC current gain BC817K-25H hFE 160 400 VCE = 1 V; IC = 100 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 7
DC current gain hFE 40 VCE = 1 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 7
Collector-emitter saturation voltage VCEsat 700 mV IC = 500 mA; IB = 50 mA; pulsed 7
Base-emitter saturation voltage VBEsat 1.2 V IC = 500 mA; IB = 50 mA; pulsed 7
Base-emitter voltage VBE 1.2 V VCE = 1 V; IC = 500 mA; pulsed 7
Transition frequency fT 100 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz 7
Collector capacitance Cc 3 pF VCB = 10 V; IE = ie = 0 A; f = 1 MHz 7
Emitter capacitance BC817K-25H Ce 39 pF VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz 7
Collector-base voltage VCBO 50 V open emitter 3
Collector-emitter voltage VCEO 45 V open base 3
Emitter-base voltage VEBO 7 V open collector 3
Collector current IC 500 mA 3
Peak collector current ICM 1 A single pulse; tp ≤ 1 ms 3
Peak base current IBM 200 mA single pulse; tp ≤ 1 ms 3
Total power dissipation Ptot 425 mW Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint 3
Total power dissipation Ptot 700 mW Tamb ≤ 25 °C; FR4 PCB, single-sided copper, collector pad 1 cm2 3
Total power dissipation Ptot 950 mW Tamb ≤ 25 °C; FR4 PCB, 4-layer copper, collector pad 1 cm2 3
Junction temperature Tj 175 °C 3
Ambient temperature Tamb -55 175 °C 3
Storage temperature Tstg -65 175 °C 3
Thermal resistance junction to ambient Rth(j-a) 353 K/W in free air; FR4 PCB, single-sided copper, standard footprint 5
Thermal resistance junction to ambient Rth(j-a) 215 K/W in free air; FR4 PCB, single-sided copper, collector pad 1 cm2 5
Thermal resistance junction to ambient Rth(j-a) 158 K/W in free air; FR4 PCB, 4-layer copper, collector pad 1 cm2 5
Thermal resistance junction to solder point Rth(j-sp) 60 K/W 5

CAD (KiCad official)

  • Symbol: BC817K-25H
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc817k-25h-etched.step / bc817k-25h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc817k-25h.step / bc817k-25h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (25 pp, sha256 909b94482c9f84ba, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF