component
BC817K-16HR
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BC817K-16HR
Nexperia · Bipolar (BJT) · SOT-23
BC817K-16HR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; peak base current is limited to IBM 200 mA (single pulse, tp ≤ 1 ms). |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base voltage VEBO is limited to 7 V with open collector. |
| 3 | C | passive | Collector of the NPN transistor; collector current is limited to IC 500 mA continuous and ICM 1 A peak (tp ≤ 1 ms), with VCEO 45 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain (BC817K-16H) | hFE | 100 | 250 | - | VCE = 1 V; IC = 100 mA; [1] pulsed tp ≤ 300 μs, δ ≤ 0.02 | 7 | |
| DC current gain (BC817K-16H, -25H, -40H) | hFE | 40 | - | VCE = 1 V; IC = 500 mA; [1] pulsed tp ≤ 300 μs, δ ≤ 0.02 | 7 | ||
| collector-base breakdown voltage | V(BR)CBO | 50 | V | IC = 100 µA; IE = 0 A | 7 | ||
| collector-emitter breakdown voltage | V(BR)CEO | 45 | V | IC = 10 mA; IB = 0 A | 7 | ||
| emitter-base breakdown voltage | V(BR)EBO | 7 | V | IE = 100 µA; IC = 0 A | 7 | ||
| collector-base cut-off current | ICBO | 100 | nA | VCB = 25 V; IE = 0 A | 7 | ||
| collector-base cut-off current (high temperature) | ICBO | 5 | μA | VCB = 25 V; IE = 0 A; Tj = 150 °C | 7 | ||
| emitter-base cut-off current | IEBO | 100 | nA | VEB = 5 V; IC = 0 A | 7 | ||
| collector-emitter saturation voltage | VCEsat | 700 | mV | IC = 500 mA; IB = 50 mA; [1] pulsed tp ≤ 300 μs, δ ≤ 0.02 | 7 | ||
| base-emitter saturation voltage | VBEsat | 1.2 | V | IC = 500 mA; IB = 50 mA; [1] pulsed tp ≤ 300 μs, δ ≤ 0.02 | 7 | ||
| base-emitter voltage | VBE | 1.2 | V | VCE = 1 V; IC = 500 mA; [1] pulsed tp ≤ 300 μs, δ ≤ 0.02 | 7 | ||
| transition frequency | fT | 100 | MHz | VCE = 5 V; IC = 10 mA; f = 100 MHz | 7 | ||
| collector-emitter voltage | VCEO | 45 | V | open base | 3 | ||
| collector-base voltage | VCBO | 50 | V | open emitter | 3 | ||
| emitter-base voltage | VEBO | 7 | V | open collector | 3 | ||
| collector current | IC | 500 | mA | 3 | |||
| peak collector current | ICM | 1 | A | single pulse; tp ≤ 1 ms | 3 | ||
| peak base current | IBM | 200 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| total power dissipation | Ptot | 425 | mW | Tamb ≤ 25 °C; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint | 3 | ||
| total power dissipation | Ptot | 700 | mW | Tamb ≤ 25 °C; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 3 | ||
| total power dissipation | Ptot | 950 | mW | Tamb ≤ 25 °C; [4] FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 | 3 | ||
| junction temperature | Tj | 175 | °C | 3 | |||
| ambient temperature | Tamb | -55 | 175 | °C | 3 | ||
| storage temperature | Tstg | -65 | 175 | °C | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 353 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint | 5 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 215 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 5 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 158 | K/W | in free air; [4] FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 | 5 | ||
| thermal resistance from junction to solder point | Rth(j-sp) | 60 | K/W | 5 |
CAD (KiCad official)
- Symbol:
BC817K-16HR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc817k-16hr-etched.step/bc817k-16hr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc817k-16hr.step/bc817k-16hr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (25 pp, sha256
909b94482c9f84ba, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC817K-16HR
**Nexperia** · Bipolar (BJT) · SOT-23
BC817K-16HR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; peak base current is limited to IBM 200 mA (single pulse, tp ≤ 1 ms). |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base voltage VEBO is limited to 7 V with open collector. |
| 3 | C | passive | Collector of the NPN transistor; collector current is limited to IC 500 mA continuous and ICM 1 A peak (tp ≤ 1 ms), with VCEO 45 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain (BC817K-16H) | hFE | 100 | | 250 | - | VCE = 1 V; IC = 100 mA; [1] pulsed tp ≤ 300 μs, δ ≤ 0.02 | 7 |
| DC current gain (BC817K-16H, -25H, -40H) | hFE | 40 | | | - | VCE = 1 V; IC = 500 mA; [1] pulsed tp ≤ 300 μs, δ ≤ 0.02 | 7 |
| collector-base breakdown voltage | V(BR)CBO | 50 | | | V | IC = 100 µA; IE = 0 A | 7 |
| collector-emitter breakdown voltage | V(BR)CEO | 45 | | | V | IC = 10 mA; IB = 0 A | 7 |
| emitter-base breakdown voltage | V(BR)EBO | 7 | | | V | IE = 100 µA; IC = 0 A | 7 |
| collector-base cut-off current | ICBO | | | 100 | nA | VCB = 25 V; IE = 0 A | 7 |
| collector-base cut-off current (high temperature) | ICBO | | | 5 | μA | VCB = 25 V; IE = 0 A; Tj = 150 °C | 7 |
| emitter-base cut-off current | IEBO | | | 100 | nA | VEB = 5 V; IC = 0 A | 7 |
| collector-emitter saturation voltage | VCEsat | | | 700 | mV | IC = 500 mA; IB = 50 mA; [1] pulsed tp ≤ 300 μs, δ ≤ 0.02 | 7 |
| base-emitter saturation voltage | VBEsat | | | 1.2 | V | IC = 500 mA; IB = 50 mA; [1] pulsed tp ≤ 300 μs, δ ≤ 0.02 | 7 |
| base-emitter voltage | VBE | | | 1.2 | V | VCE = 1 V; IC = 500 mA; [1] pulsed tp ≤ 300 μs, δ ≤ 0.02 | 7 |
| transition frequency | fT | 100 | | | MHz | VCE = 5 V; IC = 10 mA; f = 100 MHz | 7 |
| collector-emitter voltage | VCEO | | | 45 | V | open base | 3 |
| collector-base voltage | VCBO | | | 50 | V | open emitter | 3 |
| emitter-base voltage | VEBO | | | 7 | V | open collector | 3 |
| collector current | IC | | | 500 | mA | | 3 |
| peak collector current | ICM | | | 1 | A | single pulse; tp ≤ 1 ms | 3 |
| peak base current | IBM | | | 200 | mA | single pulse; tp ≤ 1 ms | 3 |
| total power dissipation | Ptot | | | 425 | mW | Tamb ≤ 25 °C; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint | 3 |
| total power dissipation | Ptot | | | 700 | mW | Tamb ≤ 25 °C; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 3 |
| total power dissipation | Ptot | | | 950 | mW | Tamb ≤ 25 °C; [4] FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 | 3 |
| junction temperature | Tj | | | 175 | °C | | 3 |
| ambient temperature | Tamb | -55 | | 175 | °C | | 3 |
| storage temperature | Tstg | -65 | | 175 | °C | | 3 |
| thermal resistance from junction to ambient | Rth(j-a) | | | 353 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint | 5 |
| thermal resistance from junction to ambient | Rth(j-a) | | | 215 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 5 |
| thermal resistance from junction to ambient | Rth(j-a) | | | 158 | K/W | in free air; [4] FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 | 5 |
| thermal resistance from junction to solder point | Rth(j-sp) | | | 60 | K/W | | 5 |
## CAD (KiCad official)
- Symbol: `BC817K-16HR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bc817k-16hr-etched.step` / `bc817k-16hr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc817k-16hr.step` / `bc817k-16hr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588913052934942720) (25 pp, sha256 `909b94482c9f84ba`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc817k-16hr-datasheet.pdf)