component
BC817
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| bc817-etched.glb | 17d ago |
| bc817-etched.step | 17d ago |
| bc817-hero.glb | 17d ago |
| bc817-hero.overlay.json | 17d ago |
| bc817.glb | 17d ago |
| bc817.kicad_mod | 17d ago |
| bc817.kicad_sym | 17d ago |
| bc817.lbr | 17d ago |
| bc817.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
BC817
Changjing · Bipolar (BJT) · SOT-23
BC817 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the NPN transistor; emitter-base voltage is limited to 5 V (VEBO) and VBE(sat) is max 1.2 V at IC=500 mA, IB=50 mA. |
| 2 | EMITTER | passive | Emitter of the NPN transistor; carries the full collector current up to 0.5 A continuous with 5 V maximum emitter-base voltage. |
| 3 | COLLECTOR | passive | Collector of the NPN transistor; rated 45 V collector-emitter (VCEO), 50 V collector-base (VCBO), 0.5 A continuous current and 0.3 W dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 45 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current -Continuous | IC | 0.5 | A | 1 | |||
| Collector Power Dissipation | PC | 0.3 | W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-emitter breakdown voltage | VCEO | 45 | V | IC= 10mA, IB=0 | 1 | ||
| Collector-base breakdown voltage | VCBO | 50 | V | IC= 10μA, IE=0 | 1 | ||
| Emitter-base breakdown voltage | VEBO | 5 | V | IE= 1μA, IC=0 | 1 | ||
| Collector cutoff current | ICBO | 0.1 | μA | VCB= 45 V, IE=0 | 1 | ||
| Emitter cutoff current | IEBO | 0.1 | μA | VEB= 4V, IC=0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 100 | 600 | VCE= 1V, IC= 100mA | 1 | ||
| DC current gain hFE(2) | hFE(2) | 40 | VCE= 1V, IC= 500mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.7 | V | IC= 500mA, IB= 50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC= 500mA, IB= 50mA | 1 | ||
| Base-emitter voltage | VBE | 1.2 | V | VCE= 1 V, IC= 500mA | 1 | ||
| Collector capacitance | Cob | 10 | pF | VCB=10V, f=1MHz | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE= 5 V, IC= 10mA, f=100MHz | 1 |
CAD (KiCad official)
- Symbol:
BC817 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc817-etched.step/bc817-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc817.step/bc817.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (2 pp, sha256
39de72837d9ca295, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).