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BC817-25Q-7-F

Diodes Incorporated · Bipolar (BJT) · SOT-23

BC817-25Q-7-F from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; the top-view pin-out shows it at the bottom left of the SOT23, and Absolute Maximum Ratings give VEBO 5.0 V and peak base current IBM 200 mA.
2 E passive Emitter; the top-view pin-out shows it at the bottom right of the SOT23, and the datasheet gives VEBO 5.0 V maximum.
3 C passive Collector; the top-view pin-out shows it as the single lead on top, and the datasheet gives VCEO 45 V, VCBO 50 V, IC 0.5 A continuous and ICM 1.0 A peak.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 50 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCEO 45 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 5 V IC = 100µA 4
Collector-Emitter Cut-Off Current ICES 100 nA VCE = 45V 4
Collector-Emitter Cut-Off Current ICES 5 µA VCE = 25V, TJ = +150°C 4
Emitter-Base Cut-Off Current IEBO 100 nA VEB = 5.0V 4
DC Current Gain (BC817-25Q) hFE 160 400 VCE = 1.0V, IC = 100mA 4
DC Current Gain (BC817-25Q) hFE 100 VCE = 1.0V, IC = 300mA 4
Collector-Emitter Saturation Voltage VCE(sat) 0.7 V IC = 500mA, IB = 50mA 4
Base-Emitter Voltage VBE 1.2 V VCE = 1.0V, IC = 300mA 4
Transition frequency fT 100 MHz VCE = 5.0V, IC = 10mA, f = 50MHz 4
Collector-Base Capacitance CCBO 12 pF VCB = 10V, f = 1.0MHz 4
Collector-Base Voltage VCBO 50 V 2
Collector-Emitter Voltage VCEO 45 V 2
Emitter-Base Voltage VEBO 5 V 2
Collector Current IC 0.5 A 2
Peak Pulse Collector Current ICM 1 A single pulse 2
Peak Pulse Base Current IBM 200 mA single pulse 2
Power Dissipation PD 310 mW Note 5 2
Power Dissipation PD 350 mW Note 6 2
Thermal Resistance, Junction to Ambient RθJA 403 °C/W Note 5 2
Thermal Resistance, Junction to Ambient RθJA 357 °C/W Note 6 2
Thermal Resistance, Junction to Leads RθJL 350 °C/W Note 7 2
Operating and Storage Temperature Range TJ, TSTG -65 150 °C 2
Electrostatic Discharge - Human Body Model ESD HBM 8000 V JEDEC Class 3B 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C 2

CAD (KiCad official)

  • Symbol: BC817-25Q-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc817-25q-7-f-etched.step / bc817-25q-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc817-25q-7-f.step / bc817-25q-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 800f073a16edf93b, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF