component
BC817-25-QR
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| bc817-25-qr-etched.glb | 17d ago |
| bc817-25-qr-etched.step | 17d ago |
| bc817-25-qr-hero.glb | 17d ago |
| bc817-25-qr-hero.overlay.json | 17d ago |
| bc817-25-qr.glb | 17d ago |
| bc817-25-qr.kicad_mod | 17d ago |
| bc817-25-qr.kicad_sym | 17d ago |
| bc817-25-qr.lbr | 17d ago |
| bc817-25-qr.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
BC817-25-QR
Nexperia · Bipolar (BJT) · SOT-23
BC817-25-QR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO limit is 5 V and peak base current IBM is 200 mA (single pulse, tp ≤ 1 ms). |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is 5 V minimum. |
| 3 | C | passive | Collector of the NPN transistor; VCEO is 45 V, VCBO is 50 V, and IC is 500 mA continuous (1 A peak). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain | hFE | 160 | 400 | BC817-25-Q; VCE = 1 V; IC = 100 mA; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.02 | 5 | ||
| DC current gain | hFE | 40 | VCE = 1 V; IC = 500 mA; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.02 | 5 | |||
| Collector-base voltage | VCBO | 50 | V | open emitter; Tamb = 25 °C | 3 | ||
| Collector-emitter voltage | VCEO | 45 | V | open base; Tamb = 25 °C | 3 | ||
| Emitter-base voltage | VEBO | 5 | V | open collector; Tamb = 25 °C | 3 | ||
| Collector current | IC | 500 | mA | Tamb = 25 °C | 3 | ||
| Peak collector current | ICM | 1 | A | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 | ||
| Peak base current | IBM | 200 | mA | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 | ||
| Total power dissipation | Ptot | 250 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint | 3 | ||
| Total power dissipation | Ptot | 345 | mW | FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -65 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 500 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint | 4 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 362 | K/W | FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 4 | ||
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 5 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 45 | V | IC = 10 mA; IE = 0 A; Tamb = 25 °C | 5 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100 µA; IC = 0 A; Tamb = 25 °C | 5 | ||
| Collector-base cut-off current | ICBO | 100 | nA | VCB = 20 V; IE = 0 A; Tamb = 25 °C | 5 | ||
| Collector-base cut-off current | ICBO | 5 | µA | VCB = 20 V; IE = 0 A; Tj = 150 °C | 5 | ||
| Emitter-base cut-off current | IEBO | 100 | nA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 5 | ||
| Collector-emitter saturation voltage | VCEsat | 700 | mV | IC = 500 mA; IB = 50 mA; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.02 | 5 | ||
| Base-emitter voltage | VBE | 1.2 | V | VCE = 1 V; IC = 500 mA; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.02 | 5 | ||
| Transition frequency | fT | 100 | MHz | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C | 5 |
CAD (KiCad official)
- Symbol:
BC817-25-QR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc817-25-qr-etched.step/bc817-25-qr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc817-25-qr.step/bc817-25-qr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (13 pp, sha256
38853c63a5ce63b1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).