component
BC817-16W
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| bc817-16w-etched.glb | 7d ago |
| bc817-16w-etched.step | 7d ago |
| bc817-16w-hero.glb | 7d ago |
| bc817-16w-hero.overlay.json | 7d ago |
| bc817-16w.glb | 7d ago |
| bc817-16w.kicad_mod | 7d ago |
| bc817-16w.kicad_sym | 7d ago |
| bc817-16w.lbr | 7d ago |
| bc817-16w.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
BC817-16W
Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-323
BC817-16W from Yangzhou Yangjie Elec Tech, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet gives VEBO of 5.0 V maximum and IEBO of 0.1 uA maximum at VEB=4.0 V. |
| 2 | E | passive | Emitter of the NPN transistor; the datasheet gives VCEO of 45 V and IC of 0.5 A as the maximum collector ratings. |
| 3 | C | passive | Collector of the NPN transistor; the datasheet gives VCBO of 50 V, VCEO of 45 V and IC of 0.5 A as maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage (breakdown) | VCEO | 45 | V | IC=10mAdc, IB=0 | 2 | ||
| Collector-Base Voltage (breakdown) | VCBO | 50 | V | IC=10uAdc, IE=0 | 2 | ||
| Emitter-Base Voltage (breakdown) | VEBO | 5 | V | IE=1.0uAdc, IC=0 | 2 | ||
| Emitter-base Cut-off Current | IEBO | 0.1 | uAdc | VEB=4.0Vdc, IC=0 | 2 | ||
| Collector-base Cut-off Current | ICBO | 0.1 | uAdc | VCB=45Vdc, IE=0 | 2 | ||
| DC Current Gain (BC817-16W rank range) | hFE(1) | 100 | 250 | IC=100mAdc, VCE=1.0Vdc | 2 | ||
| DC Current Gain | hFE(2) | 40 | IC=500mAdc, VCE=1.0Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.7 | V | IC=500mAdc, IB=50mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | V | IC=500mAdc, IB=50mAdc | 2 | ||
| Transition frequency | fT | 100 | MHz | IC=10mAdc, VCE=5.0Vdc, f=100MHz | 2 | ||
| Collector-Emitter Voltage | VCEO | 45 | V | 1 | |||
| Collector-Base Voltage | VCBO | 50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current | IC | 0.5 | A | 1 | |||
| Power Dissipation | 0.2 | Watts | TA=25℃ | 1 | |||
| Thermal Resistance from Junction to Ambient | RθJA | 625 | ℃/W | 1 | |||
| Operation Junction Temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
BC817-16W - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
bc817-16w-etched.step/bc817-16w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc817-16w.step/bc817-16w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256
c963d42626f8f789, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).