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BC816-25WX-HXY

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HXY MOSFET Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC816-25WX-HXY

HXY MOSFET · Bipolar (BJT) · SOT-323

BC816-25WX-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; VEBO max 6 V, emitter-base breakdown V(BR)EBO min 6 V at IE=10µA.
2 E passive Emitter; collector current IC up to 600 mA continuous, device dissipation 200 mW.
3 C passive Collector; VCEO 160 V and VCBO 180 V maximum, IC 600 mA continuous.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 160 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current - Continuous IC 600 mA 1
Collector Power Dissipation PC 200 mW 1
Storage Temperature Range Tstg -55 150 °C 1
Thermal Resistance From Junction To Ambient RθJA 625 °C/W 1
Collector-base breakdown voltage V(BR)CBO 180 V IC=100µA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO* 160 V IC=1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10µA, IC=0 1
Collector cut-off current ICBO 50 nA VCB=120V, IE=0 1
Emitter cut-off current IEBO 50 nA VEB=4V, IC=0 1
DC current gain hFE hFE 80 VCE=5V, IC=1mA 1
DC current gain hFE hFE 100 300 VCE=5V, IC=10mA 1
DC current gain hFE hFE 30 VCE=5V, IC=50mA 1
Collector-emitter saturation voltage VCE(sat) 0.2 V IC=50mA, IB=5mA 1
Collector-emitter saturation voltage VCE(sat) 0.15 V IC=10mA, IB=1mA 1
Base-emitter saturation voltage VBE(sat) 1 V IC=50mA, IB=5mA 1
Transition frequency fT 100 300 MHz VCE=10V,IC=10mA, f=100MHz 1
Collector output capacitance Cob 6 pF VCB=10V, IE=0, f=1MHz 1

CAD (KiCad official)

  • Symbol: BC816-25WX-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc816-25wx-hxy-etched.step / bc816-25wx-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc816-25wx-hxy.step / bc816-25wx-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 eaf155b7fc1376f1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF